0.9 V DSP blocks: a 15 ns 4 K SRAM and a 45 ns 16-bit multiply/accumulator

J. Hallmark, C. Shurboff, B. Ooms, R. Lucero, J. Abrokwah, Jenn‐Hwa Huang
{"title":"0.9 V DSP blocks: a 15 ns 4 K SRAM and a 45 ns 16-bit multiply/accumulator","authors":"J. Hallmark, C. Shurboff, B. Ooms, R. Lucero, J. Abrokwah, Jenn‐Hwa Huang","doi":"10.1109/GAAS.1994.636918","DOIUrl":null,"url":null,"abstract":"4 K SRAM and 16 bit multiply/accumulate DSP blocks have been designed and fabricated in Complementary heterostructure GaAs. Both circuits operate from 1.5 V to below 0.9 V. The SRAM uses 28,272 transistors in an area of 2.44 mm/sup 2/. Cell size is 278 /spl mu/m/sup 2/ at 1.0 /spl mu/m gate length. Measured results show an access delay of 5.3 ns at 1.5 V and 15.0 ns at 0.9 V. At 0.9 V, total power is 0.36 mW. The CGaAs multiplier uses a 16-bit modified Booth architecture with a 3-way 40-bit accumulator. The multiplier uses 11,200 transistors in an area of 1.23 mm/sup 2/. Measured delay is 19.0 ns at 1.5 V and 44.7 ns at 0.9 V. At 0.9 V, total current is less than 0.4 mA.","PeriodicalId":328819,"journal":{"name":"Proceedings of 1994 IEEE GaAs IC Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE GaAs IC Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1994.636918","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 20

Abstract

4 K SRAM and 16 bit multiply/accumulate DSP blocks have been designed and fabricated in Complementary heterostructure GaAs. Both circuits operate from 1.5 V to below 0.9 V. The SRAM uses 28,272 transistors in an area of 2.44 mm/sup 2/. Cell size is 278 /spl mu/m/sup 2/ at 1.0 /spl mu/m gate length. Measured results show an access delay of 5.3 ns at 1.5 V and 15.0 ns at 0.9 V. At 0.9 V, total power is 0.36 mW. The CGaAs multiplier uses a 16-bit modified Booth architecture with a 3-way 40-bit accumulator. The multiplier uses 11,200 transistors in an area of 1.23 mm/sup 2/. Measured delay is 19.0 ns at 1.5 V and 44.7 ns at 0.9 V. At 0.9 V, total current is less than 0.4 mA.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
0.9 V DSP模块:一个15 ns 4 K SRAM和一个45 ns 16位乘法/累加器
在互补异质结构GaAs中设计并制作了4k SRAM和16位乘/累加DSP块。这两种电路都工作在1.5 V到0.9 V以下。SRAM在2.44 mm/sup /的面积上使用28,272个晶体管。细胞大小为278 /spl mu/m/sup 2/ 1.0 /spl mu/m栅长。测量结果表明,在1.5 V和0.9 V下的接入延迟分别为5.3 ns和15.0 ns。在0.9 V时,总功率为0.36 mW。CGaAs乘法器采用16位改进Booth架构,带有3路40位累加器。该倍增器在1.23 mm/sup /的面积上使用了11,200个晶体管。测量到的延迟在1.5 V时为19.0 ns,在0.9 V时为44.7 ns。在0.9 V时,总电流小于0.4 mA。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A novel W-band monolithic push-pull power amplifier Monolithic HEMT-HBT integration for novel microwave circuit applications A 40 GHz D-type flip-flop using AlGaAs/GaAs HBTs High-speed AlGaAs/GaAs HBTs and their applications to 40-Gbit/s-class ICs 10 Gb/s monolithic optical modulator driver with high output voltage of 5 V using InGaP/GaAs HBTs
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1