Modified Cherry-Hooper Amplifier for UWB Applications in 0.35 μm SiGe BiCMOS Technology

M. Sokol, P. Galajda, S. Slovák, M. Pecovský
{"title":"Modified Cherry-Hooper Amplifier for UWB Applications in 0.35 μm SiGe BiCMOS Technology","authors":"M. Sokol, P. Galajda, S. Slovák, M. Pecovský","doi":"10.23919/IRS.2018.8447930","DOIUrl":null,"url":null,"abstract":"This paper describes a design of differential amplifier with modified Cherry-Hooper structure and emitter follower stages. The amplifier is designed for M-sequence UWB radar sensor applications and can be also utilized as a driver for specialized UWB coupled antenna. The circuit structure is designed and fabricated in 0.35 μm SiGe BiCMOS technology and has been designed for 13 GHz bandwidth with 15 dB single-ended gain. The amplifier structure consumes 450 mW from a −3.3 V supply. Parameters value of this amplifier were obtained from pre-layout and post-layout simulations.","PeriodicalId":436201,"journal":{"name":"2018 19th International Radar Symposium (IRS)","volume":"142 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 19th International Radar Symposium (IRS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/IRS.2018.8447930","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

Abstract

This paper describes a design of differential amplifier with modified Cherry-Hooper structure and emitter follower stages. The amplifier is designed for M-sequence UWB radar sensor applications and can be also utilized as a driver for specialized UWB coupled antenna. The circuit structure is designed and fabricated in 0.35 μm SiGe BiCMOS technology and has been designed for 13 GHz bandwidth with 15 dB single-ended gain. The amplifier structure consumes 450 mW from a −3.3 V supply. Parameters value of this amplifier were obtained from pre-layout and post-layout simulations.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
基于0.35 μm SiGe BiCMOS技术的超宽带应用改进Cherry-Hooper放大器
本文介绍了一种采用改进的Cherry-Hooper结构和发射极从动级的差动放大器的设计。该放大器是为m序列超宽带雷达传感器应用而设计的,也可以用作专用超宽带耦合天线的驱动器。该电路结构采用0.35 μm SiGe BiCMOS技术设计和制造,设计带宽为13 GHz,单端增益为15 dB。放大器结构从−3.3 V电源消耗450mw。通过布局前和布局后的仿真得到了该放大器的参数值。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
High Precision Surface Reconstruction Based on Coherent Near Field Synthetic Aperture Radar Scans [Copyright notice] The Distributed Radar System for Monitoring the Surrounding Situation for the Intelligent Vehicle Indoor Positioning and Body Direction Measurement System Using IR-UWB Radar Featureless Traffic Monitoring
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1