J. K. Wade, L. Mawst, D. Botez, M. Jansen, F. Fang, R. Nabiev
{"title":"High CW power 0.8 /spl mu/m-band Al-free active-region diode lasers","authors":"J. K. Wade, L. Mawst, D. Botez, M. Jansen, F. Fang, R. Nabiev","doi":"10.1109/LEOS.1996.565113","DOIUrl":null,"url":null,"abstract":"100 /spl mu/m-wide stripe, Al-free, uncoated, 0.83 /spl mu/m diode lasers provide 4.7 W CW maximum output power and 45% maximum CW wallplug efficiency at T=20/spl deg/C. The active region consists of a 150 /spl Aring/ In/sub 0.09/Ga/sub 0.91/As/sub 0.8/Pb/sub 0.2/ quantum well surrounded by 0.4 /spl mu/m In/sub 0.5/Ga/sub 0.5/P confining layers and 1.5 /spl mu/m In/sub 0.5/(Ga/sub 0.5/Al/sub 0.5/)P cladding layers. For 1 mm-long devices, we obtain threshold-current densities as low as 220 A/cm/sup 2/ and threshold-current characteristic temperature, T/sub 0/, as high as 160 K.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LEOS.1996.565113","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
100 /spl mu/m-wide stripe, Al-free, uncoated, 0.83 /spl mu/m diode lasers provide 4.7 W CW maximum output power and 45% maximum CW wallplug efficiency at T=20/spl deg/C. The active region consists of a 150 /spl Aring/ In/sub 0.09/Ga/sub 0.91/As/sub 0.8/Pb/sub 0.2/ quantum well surrounded by 0.4 /spl mu/m In/sub 0.5/Ga/sub 0.5/P confining layers and 1.5 /spl mu/m In/sub 0.5/(Ga/sub 0.5/Al/sub 0.5/)P cladding layers. For 1 mm-long devices, we obtain threshold-current densities as low as 220 A/cm/sup 2/ and threshold-current characteristic temperature, T/sub 0/, as high as 160 K.