{"title":"A Three-Stage 6W GaN Power Combining Amplifier MMIC Design at Ka-Band","authors":"Xin Liu, Xiaoling Zhu, Ziming Zhao, Ruijia Liu","doi":"10.1109/ICMMT55580.2022.10023418","DOIUrl":null,"url":null,"abstract":"A three-stage 6W Ka-band power amplifier, operating over the bandwidth of 27-31.5 GHz for 5G n257 and n261 wireless communication, is simulated in this paper. Utilizing the 0.15-um gallium nitride (GaN) high electron mobility transistor (HEMT) technology, this PA simulations achieved an output power of more than 38 dBm and a power added efficiency of more than 24% in continuous-wave (CW) operation at a drain supply voltage of 20 V. The OMN is designed carefully with a low pass LC filter and Wilkinson power combiner for high output power and broadband. The chip size is $4.3^{*}2.5\\ mm^{2}$.","PeriodicalId":211726,"journal":{"name":"2022 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","volume":"125 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMMT55580.2022.10023418","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A three-stage 6W Ka-band power amplifier, operating over the bandwidth of 27-31.5 GHz for 5G n257 and n261 wireless communication, is simulated in this paper. Utilizing the 0.15-um gallium nitride (GaN) high electron mobility transistor (HEMT) technology, this PA simulations achieved an output power of more than 38 dBm and a power added efficiency of more than 24% in continuous-wave (CW) operation at a drain supply voltage of 20 V. The OMN is designed carefully with a low pass LC filter and Wilkinson power combiner for high output power and broadband. The chip size is $4.3^{*}2.5\ mm^{2}$.
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