Pub Date : 2022-08-12DOI: 10.1109/ICMMT55580.2022.10022575
Shanzhe Wang, Jialiang Mi, Dawei Li, Zheng Li, Junhong Wang
A low-profile phase shifter filled with liquid crystals (LCs) operating in millimeter-wave band is presented here. A spoof surface plasmon polaritons transmission line (SSPPs-TL) is introduced as the propagation structure for a smaller size. By introducing a biasing voltage, the relative dielectric constant of the LCs can be changed, and hence the phase constant of the SSPPs-TL will be changed as well, leading to a phase-shift ability. The proposed design is fabricated and measured, with a good consistence between the simulated and measured results.
{"title":"Millimeter-Wave Low-Profile Phase Shifter Based On Liquid Crystals","authors":"Shanzhe Wang, Jialiang Mi, Dawei Li, Zheng Li, Junhong Wang","doi":"10.1109/ICMMT55580.2022.10022575","DOIUrl":"https://doi.org/10.1109/ICMMT55580.2022.10022575","url":null,"abstract":"A low-profile phase shifter filled with liquid crystals (LCs) operating in millimeter-wave band is presented here. A spoof surface plasmon polaritons transmission line (SSPPs-TL) is introduced as the propagation structure for a smaller size. By introducing a biasing voltage, the relative dielectric constant of the LCs can be changed, and hence the phase constant of the SSPPs-TL will be changed as well, leading to a phase-shift ability. The proposed design is fabricated and measured, with a good consistence between the simulated and measured results.","PeriodicalId":211726,"journal":{"name":"2022 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115345502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-08-12DOI: 10.1109/ICMMT55580.2022.10022061
Wenzhi Li, Zhou Du, J. Qi
Reconfigurable metasurfaces, have been studied by many researchers due to the multifunctional capability. However, most reconfigurable metasurfaces work on reflective mode, suffering from feeder blockage. In this article, we propose a reconfigurable transmissive metasurface, which is able to dynamically focus beam and other tasks. The unit cell of the metasurface, composed of two substrates and two PIN diode, has 1 bit phase resolution (0 and 180°). The magnitude of the transmissive coefficient is above 0.8, promising a good focusing efficiency.
{"title":"A Reconfigurable Transmissive Metasurface for Dynamic Focusing","authors":"Wenzhi Li, Zhou Du, J. Qi","doi":"10.1109/ICMMT55580.2022.10022061","DOIUrl":"https://doi.org/10.1109/ICMMT55580.2022.10022061","url":null,"abstract":"Reconfigurable metasurfaces, have been studied by many researchers due to the multifunctional capability. However, most reconfigurable metasurfaces work on reflective mode, suffering from feeder blockage. In this article, we propose a reconfigurable transmissive metasurface, which is able to dynamically focus beam and other tasks. The unit cell of the metasurface, composed of two substrates and two PIN diode, has 1 bit phase resolution (0 and 180°). The magnitude of the transmissive coefficient is above 0.8, promising a good focusing efficiency.","PeriodicalId":211726,"journal":{"name":"2022 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","volume":"181 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116855286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-08-12DOI: 10.1109/ICMMT55580.2022.10022595
Cong Ding, Jun‐Lin Zhan, Hao Chen, Zhenguo Liu, Wei‐Bing Lu
In this paper, we build a cooperative backscatter communication system in 2.4GHz and 3.5 GHz. A test platform including backscattering modulator, Microcontroller Unit (MCU) and receiver system based on Software Defined Radio (SDR) technology is described. In order to realize the communication in the above bands, an omnidirectional dual-band antenna is designed first. Then a backscattering modulation circuit is designed, and a diplexer with two PIN diodes are used to control the two frequency bands. The carrier transmitting and receiving demodulation system is designed at the receiving end. This paper explains the design strategy of realizing frequency- shift keying (FSK) and phase-shift keying (PSK) in the bands simultaneously, and receiving the two signals separately. It can not only meet the communication requirements for different nodes, but also realize rate superposition to improve transmission efficiency.
{"title":"Dual-band cooperative backscatter communication system","authors":"Cong Ding, Jun‐Lin Zhan, Hao Chen, Zhenguo Liu, Wei‐Bing Lu","doi":"10.1109/ICMMT55580.2022.10022595","DOIUrl":"https://doi.org/10.1109/ICMMT55580.2022.10022595","url":null,"abstract":"In this paper, we build a cooperative backscatter communication system in 2.4GHz and 3.5 GHz. A test platform including backscattering modulator, Microcontroller Unit (MCU) and receiver system based on Software Defined Radio (SDR) technology is described. In order to realize the communication in the above bands, an omnidirectional dual-band antenna is designed first. Then a backscattering modulation circuit is designed, and a diplexer with two PIN diodes are used to control the two frequency bands. The carrier transmitting and receiving demodulation system is designed at the receiving end. This paper explains the design strategy of realizing frequency- shift keying (FSK) and phase-shift keying (PSK) in the bands simultaneously, and receiving the two signals separately. It can not only meet the communication requirements for different nodes, but also realize rate superposition to improve transmission efficiency.","PeriodicalId":211726,"journal":{"name":"2022 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","volume":"41 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117241481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-08-12DOI: 10.1109/ICMMT55580.2022.10023404
Feng-yuan Mao, Bin Li, Zhijian Chen, Zhaohui Wu, Xiao-Ling Lin
In this paper, a 23-27GHz MMIC low-noise amplifier (LNA) using $0.15mumathrm{m}$ Gallium Nitride (GaN) process is proposed. By introducing a 5-element low-Q network between stages, the proposed 4-stage LNA achieves a good balance among bandwidth, noise figure (NF), gain and input return loss. The LNA exhibits a peak gain of 25.2dB and a minimum NF of 1.52dB with a 3-dB bandwidth from 23 to 27GHz. The input return loss and output return loss are better than 10 dB and 15 dB respectively. The LNA MMIC can be powered-up using a +5V DC power supply and it consumes total DC current of 30 rnA. The overall chip size is 2.7 $times 1.8text{mm}^{2}$.
{"title":"A 4-stage Low-Noise Amplifier with 1.52-1.67dB Noise Figure","authors":"Feng-yuan Mao, Bin Li, Zhijian Chen, Zhaohui Wu, Xiao-Ling Lin","doi":"10.1109/ICMMT55580.2022.10023404","DOIUrl":"https://doi.org/10.1109/ICMMT55580.2022.10023404","url":null,"abstract":"In this paper, a 23-27GHz MMIC low-noise amplifier (LNA) using $0.15mumathrm{m}$ Gallium Nitride (GaN) process is proposed. By introducing a 5-element low-Q network between stages, the proposed 4-stage LNA achieves a good balance among bandwidth, noise figure (NF), gain and input return loss. The LNA exhibits a peak gain of 25.2dB and a minimum NF of 1.52dB with a 3-dB bandwidth from 23 to 27GHz. The input return loss and output return loss are better than 10 dB and 15 dB respectively. The LNA MMIC can be powered-up using a +5V DC power supply and it consumes total DC current of 30 rnA. The overall chip size is 2.7 $times 1.8text{mm}^{2}$.","PeriodicalId":211726,"journal":{"name":"2022 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127316961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-08-12DOI: 10.1109/ICMMT55580.2022.10022802
M. Ma, F. You, Minyi Wei, T. Qian, Yingjun Chen, Maojun Pan, Yu Wang, Ce Shen, Rongxing Qin, Tao Wu, Songbai He
The two-port ABCD parameter is widely applied to a cascade network. Still, it is hard to utilize the ABCD parameter when the number of ports is more than two. In order to solve this problem, the generalized multiport conversion for complex terminal impedance between $S$ parameter and ABCD parameter is proposed in this paper, which can be integrated in circuit simulators and vector network analyzer to obtain ABCD parameter directly. Moreover, while several pairs of ports are connected each other, the $S$ parameter of the remaining ports is derived, which contributes to taking advantage of $S$ parameter for multi port network analysis, especially for complicated topologies and coupling mechanisms. The conversion between $S$ and ABCD parameter of a four-port asymmetrical coupled transmission line is verified in this paper, and the good agreement demonstrates the proposed theory well.
{"title":"A generalized multiport conversion between S parameter and ABCD parameter","authors":"M. Ma, F. You, Minyi Wei, T. Qian, Yingjun Chen, Maojun Pan, Yu Wang, Ce Shen, Rongxing Qin, Tao Wu, Songbai He","doi":"10.1109/ICMMT55580.2022.10022802","DOIUrl":"https://doi.org/10.1109/ICMMT55580.2022.10022802","url":null,"abstract":"The two-port ABCD parameter is widely applied to a cascade network. Still, it is hard to utilize the ABCD parameter when the number of ports is more than two. In order to solve this problem, the generalized multiport conversion for complex terminal impedance between $S$ parameter and ABCD parameter is proposed in this paper, which can be integrated in circuit simulators and vector network analyzer to obtain ABCD parameter directly. Moreover, while several pairs of ports are connected each other, the $S$ parameter of the remaining ports is derived, which contributes to taking advantage of $S$ parameter for multi port network analysis, especially for complicated topologies and coupling mechanisms. The conversion between $S$ and ABCD parameter of a four-port asymmetrical coupled transmission line is verified in this paper, and the good agreement demonstrates the proposed theory well.","PeriodicalId":211726,"journal":{"name":"2022 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127476852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-08-12DOI: 10.1109/ICMMT55580.2022.10022969
Linhong Cai, Hu Zheng, Yihang Tu, Yong Gao
This paper presents a wide band measurement technique with variable temperature based on free space method. The test temperature range is from room temperature to 1200°C, and the test frequency range is from 65GHz to 110GHz. A test fixture with variable temperature function and a high-frequency ultra-wideband metal focusing antenna are used. The calculation algorithm based on the principle of free space transmission and reflection uses TRL calibration and time domain gate to ensure the accuracy of the test results. Based on this method, we tested the temperature of quartz and other materials in the frequency range of 65GHz~ 110GHz. This technique can accurately measure dielectric parameters of low loss materials in variable temperature and wide band, and the test results are stable and repeatable.
{"title":"Wide band dielectric measurement technology with variable temperature based on free space method","authors":"Linhong Cai, Hu Zheng, Yihang Tu, Yong Gao","doi":"10.1109/ICMMT55580.2022.10022969","DOIUrl":"https://doi.org/10.1109/ICMMT55580.2022.10022969","url":null,"abstract":"This paper presents a wide band measurement technique with variable temperature based on free space method. The test temperature range is from room temperature to 1200°C, and the test frequency range is from 65GHz to 110GHz. A test fixture with variable temperature function and a high-frequency ultra-wideband metal focusing antenna are used. The calculation algorithm based on the principle of free space transmission and reflection uses TRL calibration and time domain gate to ensure the accuracy of the test results. Based on this method, we tested the temperature of quartz and other materials in the frequency range of 65GHz~ 110GHz. This technique can accurately measure dielectric parameters of low loss materials in variable temperature and wide band, and the test results are stable and repeatable.","PeriodicalId":211726,"journal":{"name":"2022 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127534828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-08-12DOI: 10.1109/ICMMT55580.2022.10023249
D. Cheng, C. Q. Zhang, Y. J. Li, C. G. Sun
In this paper, a compact ultra-wideband (UWB) bandpass filter based on coupled step impedance resonator (SIR) and defected ground structure (DGS) is proposed. The filter consists of a pair of coupled SIRs and an open-ring DGS. The filter presents a quasi-elliptic function response in which three transmission zeros improve the transmission characteristics of the filter. The simulated results show that the filter passband defined by $mathbf{S}_{boldsymbol{11}} boldsymbol{< -10} mathbf{dB}$ is from 3.58 to 12.57 GHz, and the insertion loss is less than 1.58 dB. In addition, the filter size is only $boldsymbol{0.22lambda }mathbf{g}boldsymbol{times 0.38lambda} mathbf{g}$ at the center frequency of 8.075 GHz.
{"title":"Ultra-Wideband Bandpass Filter With Coupled Step Impedance Resonator and Open-ring Defected Ground Structure","authors":"D. Cheng, C. Q. Zhang, Y. J. Li, C. G. Sun","doi":"10.1109/ICMMT55580.2022.10023249","DOIUrl":"https://doi.org/10.1109/ICMMT55580.2022.10023249","url":null,"abstract":"In this paper, a compact ultra-wideband (UWB) bandpass filter based on coupled step impedance resonator (SIR) and defected ground structure (DGS) is proposed. The filter consists of a pair of coupled SIRs and an open-ring DGS. The filter presents a quasi-elliptic function response in which three transmission zeros improve the transmission characteristics of the filter. The simulated results show that the filter passband defined by $mathbf{S}_{boldsymbol{11}} boldsymbol{< -10} mathbf{dB}$ is from 3.58 to 12.57 GHz, and the insertion loss is less than 1.58 dB. In addition, the filter size is only $boldsymbol{0.22lambda }mathbf{g}boldsymbol{times 0.38lambda} mathbf{g}$ at the center frequency of 8.075 GHz.","PeriodicalId":211726,"journal":{"name":"2022 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125091239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-08-12DOI: 10.1109/ICMMT55580.2022.10022702
Yan Meng, Guo Chao, Zhang Bo
This paper mainly describes the design of a miniaturized up-down converter module for Ku-band, and the key technical index requirements such as gain, gain flatness and automatic gain control (AGC) of the up-down converter module are analyzed. In this paper, the scheme is designed and optimized, and the module is implemented by hardware which has the characteristics of ultra-wideband, high integration, and good spurious and harmonic wave suppression by using the micro package technology and the low temperature co-Fired ceramic (LTCC) process.
{"title":"Design of a Miniaturized Up-Down Converter Module","authors":"Yan Meng, Guo Chao, Zhang Bo","doi":"10.1109/ICMMT55580.2022.10022702","DOIUrl":"https://doi.org/10.1109/ICMMT55580.2022.10022702","url":null,"abstract":"This paper mainly describes the design of a miniaturized up-down converter module for Ku-band, and the key technical index requirements such as gain, gain flatness and automatic gain control (AGC) of the up-down converter module are analyzed. In this paper, the scheme is designed and optimized, and the module is implemented by hardware which has the characteristics of ultra-wideband, high integration, and good spurious and harmonic wave suppression by using the micro package technology and the low temperature co-Fired ceramic (LTCC) process.","PeriodicalId":211726,"journal":{"name":"2022 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126111915","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-08-12DOI: 10.1109/ICMMT55580.2022.10023155
Jingxuan Li, Yu-ming Wu, X. Lv
Power amplifier (PA) is one of the most power-consuming blocks in a transmitter. It is critical to improve power-added efficiency (PAE) in the design of a PA. This paper presents a 2.4 GHz class-E PA particularly designed with a two-stage architecture. The inverter driver stage outputs a full swing square wave to control the on-off of the power stage. By using cascode self-biased topology in the power stage, the peak drain-gate voltage is reduced and the problem caused by transistor breakdown voltage can be overcome. According to the post-simulated results, the proposed PA provides greater than 35% PAE while delivering adjustable saturation output power (Psat) between 9.3 and 17.6 dBm at the center frequency of 2.4 GHz in $0.13 mu mathrm{m}$ CMOS. In the maximum Psat state, the PAE is 40.6% with a 1.2V supply voltage and the optimum load resistance obtained in load-pull simulation.
{"title":"Study on a $0.13-upmu mathrm{m}$ CMOS Class-E 2.4 GHz Adjustable Power Amplifier for IoT Application","authors":"Jingxuan Li, Yu-ming Wu, X. Lv","doi":"10.1109/ICMMT55580.2022.10023155","DOIUrl":"https://doi.org/10.1109/ICMMT55580.2022.10023155","url":null,"abstract":"Power amplifier (PA) is one of the most power-consuming blocks in a transmitter. It is critical to improve power-added efficiency (PAE) in the design of a PA. This paper presents a 2.4 GHz class-E PA particularly designed with a two-stage architecture. The inverter driver stage outputs a full swing square wave to control the on-off of the power stage. By using cascode self-biased topology in the power stage, the peak drain-gate voltage is reduced and the problem caused by transistor breakdown voltage can be overcome. According to the post-simulated results, the proposed PA provides greater than 35% PAE while delivering adjustable saturation output power (Psat) between 9.3 and 17.6 dBm at the center frequency of 2.4 GHz in $0.13 mu mathrm{m}$ CMOS. In the maximum Psat state, the PAE is 40.6% with a 1.2V supply voltage and the optimum load resistance obtained in load-pull simulation.","PeriodicalId":211726,"journal":{"name":"2022 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126197569","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-08-12DOI: 10.1109/ICMMT55580.2022.10023279
Wen Yi, Cui Dasheng, Zhao Baozhen, Yann Yu
In order to realize the integrated terahertz imaging detector, the on-chip Schottky barrier diodes and lens antennas are studied in this paper. Schottky barrier diode with cut-off frequency of 800 GHz was manufactured by polysilicon gate separation technology in SMIC 180 nm process. A conic extension is used for optimizing the spherical aberration of lenses. The principle is explained by ray-tracing theory, and its model is simulated, optimized and fabricated by nylon. The integrated detector is composed of a lens antenna and a Schottky barrier diodes. The assembled detector is tested at 220GHz, whose response rate of the test result is 130 V/W and the noise equivalent power is 400 pW / ✓ Hz. Using the detector designed in this paper to do the liquid level imaging experiment in the opaque ceramic bottle, the liquid level image is clearly visible, which shows the application potential of terahertz imaging in the field of nondestructive testing.
{"title":"A highly integrated terahertz imaging detector with conical extended hemispherical lens antennas","authors":"Wen Yi, Cui Dasheng, Zhao Baozhen, Yann Yu","doi":"10.1109/ICMMT55580.2022.10023279","DOIUrl":"https://doi.org/10.1109/ICMMT55580.2022.10023279","url":null,"abstract":"In order to realize the integrated terahertz imaging detector, the on-chip Schottky barrier diodes and lens antennas are studied in this paper. Schottky barrier diode with cut-off frequency of 800 GHz was manufactured by polysilicon gate separation technology in SMIC 180 nm process. A conic extension is used for optimizing the spherical aberration of lenses. The principle is explained by ray-tracing theory, and its model is simulated, optimized and fabricated by nylon. The integrated detector is composed of a lens antenna and a Schottky barrier diodes. The assembled detector is tested at 220GHz, whose response rate of the test result is 130 V/W and the noise equivalent power is 400 pW / ✓ Hz. Using the detector designed in this paper to do the liquid level imaging experiment in the opaque ceramic bottle, the liquid level image is clearly visible, which shows the application potential of terahertz imaging in the field of nondestructive testing.","PeriodicalId":211726,"journal":{"name":"2022 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","volume":"2 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125298091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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