{"title":"Static and dynamic behaviour of paralleled IGBTs","authors":"R. Letor","doi":"10.1109/IAS.1990.152401","DOIUrl":null,"url":null,"abstract":"The current balance, thermal stability, and switching behavior characteristics of parallel insulated-gate bipolar transistors (IGBTs) are analyzed. The influences of heat sink mounting, lay-out, and the drive circuit are described in order to demonstrate the best way to parallel IGBTs for optimum performance. An example of two paralleled IGBTs in a fully insulated package is discussed.<<ETX>>","PeriodicalId":185839,"journal":{"name":"Conference Record of the 1990 IEEE Industry Applications Society Annual Meeting","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"23","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the 1990 IEEE Industry Applications Society Annual Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IAS.1990.152401","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 23
Abstract
The current balance, thermal stability, and switching behavior characteristics of parallel insulated-gate bipolar transistors (IGBTs) are analyzed. The influences of heat sink mounting, lay-out, and the drive circuit are described in order to demonstrate the best way to parallel IGBTs for optimum performance. An example of two paralleled IGBTs in a fully insulated package is discussed.<>
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