The five schemes are resistive-load-based deadbeat (DB) control, disturbance-observer-based DB control I. disturbance-observer-based DB control II, internal-model-principle-based pole placement, and digital proportional-integral (PI) control. The control schemes are applicable to single-phase and three-phase balanced-load inverter systems because the balanced three-phase system can be converted to two decoupled single phase systems. The modification of the control law from a single-phase to a three-phase system is explained. Simulations were performed in both systems, and experiments were carried out in the three-phase PWM inverter system. The disturbance-observer-based I and the digital PI control schemes yielded the best overall performance. The former is better in terms of total harmonic distortion for a nonlinear load, but the latter is based on a much simpler algorithm.<>
{"title":"Comparison of five different approaches for real time digital feedback control of PWM inverters","authors":"A. Kawamura, T. Yokoyama","doi":"10.1109/IAS.1990.152307","DOIUrl":"https://doi.org/10.1109/IAS.1990.152307","url":null,"abstract":"The five schemes are resistive-load-based deadbeat (DB) control, disturbance-observer-based DB control I. disturbance-observer-based DB control II, internal-model-principle-based pole placement, and digital proportional-integral (PI) control. The control schemes are applicable to single-phase and three-phase balanced-load inverter systems because the balanced three-phase system can be converted to two decoupled single phase systems. The modification of the control law from a single-phase to a three-phase system is explained. Simulations were performed in both systems, and experiments were carried out in the three-phase PWM inverter system. The disturbance-observer-based I and the digital PI control schemes yielded the best overall performance. The former is better in terms of total harmonic distortion for a nonlinear load, but the latter is based on a much simpler algorithm.<<ETX>>","PeriodicalId":185839,"journal":{"name":"Conference Record of the 1990 IEEE Industry Applications Society Annual Meeting","volume":"274 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121211989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The effects of current-fall shapes on RC-snubber performance are examined to determine if smaller snubbers that remain tolerant to varying current-fall shapes and durations and give lower power-losses can be used. The effects of component imperfections on RC-snubber performance, the optimization of RC-snubbers with nonabrupt current-falls, the sensitivity of nonabrupt snubbers to current-fall variations, and the energy losses associated with nonabrupt snubbers are discussed. It is shown that finely tuning RC-snubber components to take into account nonabrupt current fall, allows reduced snubber capacitance to be used under certain operating conditions. However, voltage-responses become more sensitive to current-fall shape, diode switching-loss is increased by several orders of magnitude, and there appears to be no significant energy-loss advantage with sinusoidally modulated current.<>
{"title":"Evaluating the reduction in snubbing with soft-recovery devices and the effect of resistor inductance","authors":"F. Robinson, Barry W. Williams","doi":"10.1109/IAS.1990.152413","DOIUrl":"https://doi.org/10.1109/IAS.1990.152413","url":null,"abstract":"The effects of current-fall shapes on RC-snubber performance are examined to determine if smaller snubbers that remain tolerant to varying current-fall shapes and durations and give lower power-losses can be used. The effects of component imperfections on RC-snubber performance, the optimization of RC-snubbers with nonabrupt current-falls, the sensitivity of nonabrupt snubbers to current-fall variations, and the energy losses associated with nonabrupt snubbers are discussed. It is shown that finely tuning RC-snubber components to take into account nonabrupt current fall, allows reduced snubber capacitance to be used under certain operating conditions. However, voltage-responses become more sensitive to current-fall shape, diode switching-loss is increased by several orders of magnitude, and there appears to be no significant energy-loss advantage with sinusoidally modulated current.<<ETX>>","PeriodicalId":185839,"journal":{"name":"Conference Record of the 1990 IEEE Industry Applications Society Annual Meeting","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127293906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A theoretical study of a half-wave rectified brushless synchronous motor is described. The field of the new type of brushless synchronous motor is excited not only by the field current obtained by rectifying the EMF in the field winding with a diode, but also by permanent magnets. The EMF is induced by the MMF which rotates at synchronous speed and pulsates at bias frequency. The characteristic equations are derived, and the effects of modulation function waveform and excitation method on the performance characteristics are investigated. The calculated results of the performance characteristics agree well with experimental results. It is confirmed from the theoretical study that the triangular wave is most advantageous for the modulation function and that the use of permanent magnet excitation improves the power factor.<>
{"title":"Analysis of half-wave rectified brushless synchronous motor with permanent magnets","authors":"J. Oyama, T. Higuchi, T. Abe, E. Yamada","doi":"10.1109/IAS.1990.152178","DOIUrl":"https://doi.org/10.1109/IAS.1990.152178","url":null,"abstract":"A theoretical study of a half-wave rectified brushless synchronous motor is described. The field of the new type of brushless synchronous motor is excited not only by the field current obtained by rectifying the EMF in the field winding with a diode, but also by permanent magnets. The EMF is induced by the MMF which rotates at synchronous speed and pulsates at bias frequency. The characteristic equations are derived, and the effects of modulation function waveform and excitation method on the performance characteristics are investigated. The calculated results of the performance characteristics agree well with experimental results. It is confirmed from the theoretical study that the triangular wave is most advantageous for the modulation function and that the use of permanent magnet excitation improves the power factor.<<ETX>>","PeriodicalId":185839,"journal":{"name":"Conference Record of the 1990 IEEE Industry Applications Society Annual Meeting","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123242372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The effects of ionizing radiation on the performance of electronic power amplifiers with complementary power MOSFETs in the output stage are examined. It is shown that the primary effect of ionizing radiation on power MOSFETs is a shift in the threshold voltage. For p-channel power MOSFETs, this shift is always negative, and for n-channel devices, the polarity of the shift depends on part type, bias conditions, and dose rate. It was found that ionizing radiation leads to failure of the amplifier if the threshold voltage of the n-channel device increases with total dose. If both power MOSFETs exhibit a negative threshold-voltage shift, increases in power dissipation and output offset voltage result. The failure mode of the amplifier depends on the relative magnitude of the threshold-voltage shift in the p- and n-channel power MOSFETs, and on the polarity of the shift in the n-channel device.<>
{"title":"Ionizing-radiation-induced degradation in electronic power amplifiers","authors":"N. V. Barbara, peixiong zhao, W. Kerwin","doi":"10.1109/IAS.1990.152410","DOIUrl":"https://doi.org/10.1109/IAS.1990.152410","url":null,"abstract":"The effects of ionizing radiation on the performance of electronic power amplifiers with complementary power MOSFETs in the output stage are examined. It is shown that the primary effect of ionizing radiation on power MOSFETs is a shift in the threshold voltage. For p-channel power MOSFETs, this shift is always negative, and for n-channel devices, the polarity of the shift depends on part type, bias conditions, and dose rate. It was found that ionizing radiation leads to failure of the amplifier if the threshold voltage of the n-channel device increases with total dose. If both power MOSFETs exhibit a negative threshold-voltage shift, increases in power dissipation and output offset voltage result. The failure mode of the amplifier depends on the relative magnitude of the threshold-voltage shift in the p- and n-channel power MOSFETs, and on the polarity of the shift in the n-channel device.<<ETX>>","PeriodicalId":185839,"journal":{"name":"Conference Record of the 1990 IEEE Industry Applications Society Annual Meeting","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115528713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
An optimized pulse-width modulation (PWM) control technique for a high-frequency (HF) link switch mode rectifier (SMR) is presented. The technique provides line current sinewave shaping and power factor correction while ensuring amplitude modulation (AM) of the HF square-wave voltage (or current) at the HF transformer primary side in a single power processing stage. A current-waveshaping control strategy that allows operation in the boosting and inverting stages while drawing a sinusoidal line current has been analyzed and experimentally tested. The control method allows operation at high switching frequencies of up to 70 kHz, which is higher than the inductor current ripple frequency. Experimental results from a 1.5 kVA unit that was set up in the laboratory using power MOSFET modules (50 A/450 V) show that operation at sinusoidal line current without waveform distortion at the vicinity of the zero crossing is possible.<>
提出了一种优化的高频链路开关整流器脉宽调制(PWM)控制技术。该技术提供线路电流正弦波整形和功率因数校正，同时确保高频变压器初级侧高频方波电压(或电流)的调幅(AM)。分析和实验测试了一种电流整形控制策略，该策略允许在升压和反相阶段同时绘制正弦线电流。该控制方法允许在高达70 kHz的高开关频率下工作，该频率高于电感电流纹波频率。使用功率MOSFET模块(50 a /450 V)在实验室中设置的1.5 kVA单元的实验结果表明，在正弦线电流下工作，在过零点附近没有波形失真是可能的。
{"title":"A new control topology of single-stage HF link switch-mode rectifier with sinusoidal line current","authors":"A. Chibani, M. Nakaoka","doi":"10.1109/IAS.1990.152330","DOIUrl":"https://doi.org/10.1109/IAS.1990.152330","url":null,"abstract":"An optimized pulse-width modulation (PWM) control technique for a high-frequency (HF) link switch mode rectifier (SMR) is presented. The technique provides line current sinewave shaping and power factor correction while ensuring amplitude modulation (AM) of the HF square-wave voltage (or current) at the HF transformer primary side in a single power processing stage. A current-waveshaping control strategy that allows operation in the boosting and inverting stages while drawing a sinusoidal line current has been analyzed and experimentally tested. The control method allows operation at high switching frequencies of up to 70 kHz, which is higher than the inductor current ripple frequency. Experimental results from a 1.5 kVA unit that was set up in the laboratory using power MOSFET modules (50 A/450 V) show that operation at sinusoidal line current without waveform distortion at the vicinity of the zero crossing is possible.<<ETX>>","PeriodicalId":185839,"journal":{"name":"Conference Record of the 1990 IEEE Industry Applications Society Annual Meeting","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116137992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The AC line current to a fully loaded, three-phase pulse-width modulation (PWM) drive varies with the AC line impedance. The PWM drive consists of a three-phase diode bridge supplying DC power to a bus capacitor and an inverter. The lower the per-phase line inductance, the greater the RMS AC line input current. AC line current peak, and harmonic currents. Results from a computer study that tabulated the RMS current and harmonics are presented. The study considers the effect of reduced line current due to diode current commutation with higher line inductance. Data from a laboratory test set-up are tabulated and confirm the results.<>
{"title":"AC line current variation on a three-phase PWM drive with AC line impedance","authors":"R. Schieman, T. Khuwatsamrit","doi":"10.1109/IAS.1990.152316","DOIUrl":"https://doi.org/10.1109/IAS.1990.152316","url":null,"abstract":"The AC line current to a fully loaded, three-phase pulse-width modulation (PWM) drive varies with the AC line impedance. The PWM drive consists of a three-phase diode bridge supplying DC power to a bus capacitor and an inverter. The lower the per-phase line inductance, the greater the RMS AC line input current. AC line current peak, and harmonic currents. Results from a computer study that tabulated the RMS current and harmonics are presented. The study considers the effect of reduced line current due to diode current commutation with higher line inductance. Data from a laboratory test set-up are tabulated and confirm the results.<<ETX>>","PeriodicalId":185839,"journal":{"name":"Conference Record of the 1990 IEEE Industry Applications Society Annual Meeting","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122520611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Two medium-power high-performance power converters for industrial applications that use bipolar transistors and insulated-gate bipolar transistors are described. The first is an isolated 3 kW DC-DC 500 V (380 V rectified and filtered) power supply whose frequency is variable up to 100 kHz. Efficiency is shown to be 94%, and the power-frequency product is 3*10/sup 8/ WHz. The principles developed (switch bidirectionality) allow this converter to work as a quasi-perfect voltage power supply. The second application is a one-phase DC-AC power converter whose power supply is 500 V (380 V mains rectified and filtered). This converter continuously provides 20 kW at a constant frequency of 20 kHz. Its power-frequency product is 4*10/sup 8/ WHz. This converter exhibits a pulse-width modulated mode with a fully controlled resonant switch. Quasi-resonance principles, corresponding switch structures using thyristor functions and the control of the devices which constitute synthetic thyristors are reviewed.<>
介绍了两种采用双极晶体管和绝缘栅双极晶体管的中功率高性能工业功率变换器。第一种是隔离的3kw DC-DC 500 V (380 V整流和滤波)电源，其频率可达100 kHz。效率为94%，工频积为3*10/sup 8/ WHz。所开发的原理(开关双向性)允许该转换器作为准完美的电压电源工作。第二个应用是单相直流-交流电源转换器，其电源为500 V (380 V市电整流和滤波)。该转换器以20khz的恒定频率连续提供20kw。工频乘积为4*10/sup 8/ WHz。该变换器具有脉冲宽度调制模式，具有完全控制的谐振开关。综述了准谐振原理、利用晶闸管功能的相应开关结构以及构成合成晶闸管的器件的控制
{"title":"Use of quasi-resonance principles with linearization process, in medium-power, high frequency converters-conception rules of corresponding synthetic thyristors","authors":"P. Toussaint, C. Sol, F. Forest, J. Gonazalez","doi":"10.1109/IAS.1990.152356","DOIUrl":"https://doi.org/10.1109/IAS.1990.152356","url":null,"abstract":"Two medium-power high-performance power converters for industrial applications that use bipolar transistors and insulated-gate bipolar transistors are described. The first is an isolated 3 kW DC-DC 500 V (380 V rectified and filtered) power supply whose frequency is variable up to 100 kHz. Efficiency is shown to be 94%, and the power-frequency product is 3*10/sup 8/ WHz. The principles developed (switch bidirectionality) allow this converter to work as a quasi-perfect voltage power supply. The second application is a one-phase DC-AC power converter whose power supply is 500 V (380 V mains rectified and filtered). This converter continuously provides 20 kW at a constant frequency of 20 kHz. Its power-frequency product is 4*10/sup 8/ WHz. This converter exhibits a pulse-width modulated mode with a fully controlled resonant switch. Quasi-resonance principles, corresponding switch structures using thyristor functions and the control of the devices which constitute synthetic thyristors are reviewed.<<ETX>>","PeriodicalId":185839,"journal":{"name":"Conference Record of the 1990 IEEE Industry Applications Society Annual Meeting","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114400509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Measurements were performed on two types of commercially available and custom-made CMOS integrated circuits to investigate the latent mode of failure due to ESD (electrostatic discharge). The current injection test method is used for both polarities of discharge. Test parameters studied include threshold failure, constant amplitude multiple stress, step stress, and the stress hardening effect. Statistical analyses of the results demonstrate the presence of latent failure in CMOS integrated circuits due to ESD. The work is used to further expand a charge injection model for latent failures.<>
{"title":"ESD latency effects in CMOS integrated circuits","authors":"W. Greason, Z. Kucerovsky, K. Chum","doi":"10.1109/IAS.1990.152287","DOIUrl":"https://doi.org/10.1109/IAS.1990.152287","url":null,"abstract":"Measurements were performed on two types of commercially available and custom-made CMOS integrated circuits to investigate the latent mode of failure due to ESD (electrostatic discharge). The current injection test method is used for both polarities of discharge. Test parameters studied include threshold failure, constant amplitude multiple stress, step stress, and the stress hardening effect. Statistical analyses of the results demonstrate the presence of latent failure in CMOS integrated circuits due to ESD. The work is used to further expand a charge injection model for latent failures.<<ETX>>","PeriodicalId":185839,"journal":{"name":"Conference Record of the 1990 IEEE Industry Applications Society Annual Meeting","volume":"2014 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114593330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The torque disturbances caused by imperfections in a permanent magnet brushless sinusoidal motor and sinusoidal power amplifier are discussed, and the major sources of disturbances are quantified. Brushless rate servos are shown to contain many new sources of torque disturbances, in addition to the disturbances produced by brush type rate servos. The imperfections are harmonic error, phase error, offset, quantization, and unequal magnitudes. These disturbances have magnitudes in the range of 0.01 to 5% of peak torque and are of interest in rate servos with part-per-million instantaneous rate stability requirements.<>
{"title":"Drive induced torque disturbances in brushless rate servos","authors":"R.B. Anticole","doi":"10.1109/IAS.1990.152447","DOIUrl":"https://doi.org/10.1109/IAS.1990.152447","url":null,"abstract":"The torque disturbances caused by imperfections in a permanent magnet brushless sinusoidal motor and sinusoidal power amplifier are discussed, and the major sources of disturbances are quantified. Brushless rate servos are shown to contain many new sources of torque disturbances, in addition to the disturbances produced by brush type rate servos. The imperfections are harmonic error, phase error, offset, quantization, and unequal magnitudes. These disturbances have magnitudes in the range of 0.01 to 5% of peak torque and are of interest in rate servos with part-per-million instantaneous rate stability requirements.<<ETX>>","PeriodicalId":185839,"journal":{"name":"Conference Record of the 1990 IEEE Industry Applications Society Annual Meeting","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117011428","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The current balance, thermal stability, and switching behavior characteristics of parallel insulated-gate bipolar transistors (IGBTs) are analyzed. The influences of heat sink mounting, lay-out, and the drive circuit are described in order to demonstrate the best way to parallel IGBTs for optimum performance. An example of two paralleled IGBTs in a fully insulated package is discussed.<>
{"title":"Static and dynamic behaviour of paralleled IGBTs","authors":"R. Letor","doi":"10.1109/IAS.1990.152401","DOIUrl":"https://doi.org/10.1109/IAS.1990.152401","url":null,"abstract":"The current balance, thermal stability, and switching behavior characteristics of parallel insulated-gate bipolar transistors (IGBTs) are analyzed. The influences of heat sink mounting, lay-out, and the drive circuit are described in order to demonstrate the best way to parallel IGBTs for optimum performance. An example of two paralleled IGBTs in a fully insulated package is discussed.<<ETX>>","PeriodicalId":185839,"journal":{"name":"Conference Record of the 1990 IEEE Industry Applications Society Annual Meeting","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128302025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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