Prospects of Zinc Sulphide as an alternative buffer layer for CZTS solar cells from numerical analysis

F. Haque, N. Khan, K. S. Rahman, M. Islam, M. Alam, K. Sopian, N. Amin
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引用次数: 12

Abstract

Zinc Sulphide (ZnS) is a promising candidate to be an alternative buffer layer to the commonly used cadmium sulphide (CdS) in CZTS solar cells. In this study, buffer layer parameters like layer thickness and buffer layer bandgap have been investigated by Analysis of Microelectronic and Photonic Structures (AMPS-1D) to find out the higher conversion efficiency. A promising result has been achieved with an efficiency of 14.49% (with Voc = 0.81 V, Jsc = 28.85 mA/cm2 and Fill factor = 67.5) by using ZnS as a buffer layer. It is also found that the high efficiency of CZTS absorber layer thickness is between 2 μm and 4 μm. From the simulation results, it is revealed that higher efficiency can be achieved for the buffer layer bandgap around 3.10 eV - 3.25 eV. This result can be explained by the practical work as the bandgap of ZnS is largely dependent on the preparation conditions and stoichiometry. In conclusion, numerous influences of buffer layer are investigated in CZTS solar cell that can lead to the fabrication of high efficiency devices.
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从数值分析看硫化锌作为CZTS太阳能电池备选缓冲层的前景
在CZTS太阳能电池中,硫化锌(ZnS)是替代常用的硫化镉(cd)的一种很有前途的缓冲层。本研究通过微电子与光子结构分析(AMPS-1D)对缓冲层厚度、缓冲层带隙等参数进行了研究,以获得更高的转换效率。采用ZnS作为缓冲层,效率达到14.49% (Voc = 0.81 V, Jsc = 28.85 mA/cm2, Fill factor = 67.5)。同时发现,吸收层厚度在2 ~ 4 μm之间时,吸收效率最高。仿真结果表明,当缓冲层带隙在3.10 eV ~ 3.25 eV左右时,可以获得较高的效率。这一结果可以用实际工作来解释,因为ZnS的带隙很大程度上取决于制备条件和化学计量。综上所述,本文研究了缓冲层对CZTS太阳能电池中高效器件制造的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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