Pub Date : 2015-02-02DOI: 10.1080/23311940.2015.1006107
G. R. Ahmed Jamal, S. M. Mominuzzaman
In this work, a quick and effective method to calculate the second and third optical transition energies of metallic armchair single wall carbon nanotubes (SWCNT) is presented. In this proposed method, the transition energy of any armchair SWCNT can be predicted directly just by knowing one of its chiral index. The predicted results are compared with recent experimental data and found to be accurate over a wide diameter range. The empirical equation proposed here is also compared with that proposed in earlier works. The proposed way may help the research works or applications where information of optical transitions of armchair metallic nanotubes is needed.
{"title":"Empirical prediction of optical transitions in metallic armchair SWCNTs","authors":"G. R. Ahmed Jamal, S. M. Mominuzzaman","doi":"10.1080/23311940.2015.1006107","DOIUrl":"https://doi.org/10.1080/23311940.2015.1006107","url":null,"abstract":"In this work, a quick and effective method to calculate the second and third optical transition energies of metallic armchair single wall carbon nanotubes (SWCNT) is presented. In this proposed method, the transition energy of any armchair SWCNT can be predicted directly just by knowing one of its chiral index. The predicted results are compared with recent experimental data and found to be accurate over a wide diameter range. The empirical equation proposed here is also compared with that proposed in earlier works. The proposed way may help the research works or applications where information of optical transitions of armchair metallic nanotubes is needed.","PeriodicalId":335492,"journal":{"name":"8th International Conference on Electrical and Computer Engineering","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122030285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-01DOI: 10.1109/ICECE.2014.7026922
Sanyat Hoque, S. Pal, Atiqur Rahman
The growth of mobile broadband has unleashed the necessity of advance mobile network structure. Heterogeneous Network (HetNet) technology is designed to be highly adaptable in subscribers' homes to provide high data rate communications with good quality of service. Femtocells are the indoor nodes of HetNet. Efficient handover of calls is the priority for successful femtocell/macrocell joint transmission. Handoff of femtocell-to-femtocell handover is the most visible challenge for dense deployment of nodes. This particular handover needs minimum as well appropriate neighbouring cell list which is needed for its successful operation. In this paper, we proposed an algorithm for dense femtocells deployment, i.e., an algorithm to create an optimized neighbour cell list with minimum number of femtocells (including the reduction of interfering femtocells and finding hidden ones). An appropriate and optimal neighbour femtocell list is mandatory for the much needed dense femtocellular network deployment in the near future. Therefore, reducing the size of the neighbour femtocell and making the list more efficient results in minimizing the amount of scanning and signal flow of mobile station during handover.
{"title":"HETNET neighbour handover cell list optimization based on cognitive programmed threshold response","authors":"Sanyat Hoque, S. Pal, Atiqur Rahman","doi":"10.1109/ICECE.2014.7026922","DOIUrl":"https://doi.org/10.1109/ICECE.2014.7026922","url":null,"abstract":"The growth of mobile broadband has unleashed the necessity of advance mobile network structure. Heterogeneous Network (HetNet) technology is designed to be highly adaptable in subscribers' homes to provide high data rate communications with good quality of service. Femtocells are the indoor nodes of HetNet. Efficient handover of calls is the priority for successful femtocell/macrocell joint transmission. Handoff of femtocell-to-femtocell handover is the most visible challenge for dense deployment of nodes. This particular handover needs minimum as well appropriate neighbouring cell list which is needed for its successful operation. In this paper, we proposed an algorithm for dense femtocells deployment, i.e., an algorithm to create an optimized neighbour cell list with minimum number of femtocells (including the reduction of interfering femtocells and finding hidden ones). An appropriate and optimal neighbour femtocell list is mandatory for the much needed dense femtocellular network deployment in the near future. Therefore, reducing the size of the neighbour femtocell and making the list more efficient results in minimizing the amount of scanning and signal flow of mobile station during handover.","PeriodicalId":335492,"journal":{"name":"8th International Conference on Electrical and Computer Engineering","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120976357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-01DOI: 10.1109/ICECE.2014.7026961
Md. Nazrul Islam Mondal, Md. Shahid Uz Zaman, B. Pal
Circuit design that minimizes the number of clock cycles is easy if we use asynchronous read operations. However, most of FPGAs support synchronous read operations, but do not support asynchronous read operations. It is one of the main difficulties for users to implement parallel and hardware algorithms in FPGAs. The main contribution of this paper is to provide one of the potent approaches to resolve this problem. We assume that a circuit which includes cycles using asynchronous RAMs designed by a non-expert or quickly designed by an expert is given. Our goal is to convert this circuit with asynchronous RAMs into an equivalent synchronous ones. The resulting circuit with synchronous RAMs can be embedded into the FPGAs.
{"title":"A graph rewriting approach to replace asynchronous RAMs in circuits with cycles for FPGAs","authors":"Md. Nazrul Islam Mondal, Md. Shahid Uz Zaman, B. Pal","doi":"10.1109/ICECE.2014.7026961","DOIUrl":"https://doi.org/10.1109/ICECE.2014.7026961","url":null,"abstract":"Circuit design that minimizes the number of clock cycles is easy if we use asynchronous read operations. However, most of FPGAs support synchronous read operations, but do not support asynchronous read operations. It is one of the main difficulties for users to implement parallel and hardware algorithms in FPGAs. The main contribution of this paper is to provide one of the potent approaches to resolve this problem. We assume that a circuit which includes cycles using asynchronous RAMs designed by a non-expert or quickly designed by an expert is given. Our goal is to convert this circuit with asynchronous RAMs into an equivalent synchronous ones. The resulting circuit with synchronous RAMs can be embedded into the FPGAs.","PeriodicalId":335492,"journal":{"name":"8th International Conference on Electrical and Computer Engineering","volume":"141 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127485223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-01DOI: 10.1109/ICECE.2014.7027017
K. M. Nazrul Islam, S. Majumder
An analytical approach is presented to evaluate the impact of timing jitter on the bit error rate performance of optical M-ary pulse position modulation (M-PPM) free space optical (FSO) link under the influence of atmospheric turbulence modelled by Log-normal distribution. The expression of the conditional bit error rate (BER) for a given timing jitter is developed and the average BER is found by averaging the conditional BER over the probability density function of the timing jitter which is considered to be zero mean Gaussian. The results are evaluated at a bit rate of 2.4 Gbps over weak turbulence with Avalanche Photodiode (APD) receiver for different order of M-PPM modulation. It is found that there is significant deterioration in BER performance with increase in timing jitter variance and results in BER floor at higher value of jitter variance for a given M-PPM order and APD gain. Further, it is noticed that higher order M-PPM system suffer less than lower order PPM system at a given system BER. The analysis can also be useful for evaluating the impact of slot timing jitter for M-PPM FSO system with strong turbulence.
{"title":"Effect of timing jitter on the BER performance of a M-PPM FSO link over atmospheric turbulence channel","authors":"K. M. Nazrul Islam, S. Majumder","doi":"10.1109/ICECE.2014.7027017","DOIUrl":"https://doi.org/10.1109/ICECE.2014.7027017","url":null,"abstract":"An analytical approach is presented to evaluate the impact of timing jitter on the bit error rate performance of optical M-ary pulse position modulation (M-PPM) free space optical (FSO) link under the influence of atmospheric turbulence modelled by Log-normal distribution. The expression of the conditional bit error rate (BER) for a given timing jitter is developed and the average BER is found by averaging the conditional BER over the probability density function of the timing jitter which is considered to be zero mean Gaussian. The results are evaluated at a bit rate of 2.4 Gbps over weak turbulence with Avalanche Photodiode (APD) receiver for different order of M-PPM modulation. It is found that there is significant deterioration in BER performance with increase in timing jitter variance and results in BER floor at higher value of jitter variance for a given M-PPM order and APD gain. Further, it is noticed that higher order M-PPM system suffer less than lower order PPM system at a given system BER. The analysis can also be useful for evaluating the impact of slot timing jitter for M-PPM FSO system with strong turbulence.","PeriodicalId":335492,"journal":{"name":"8th International Conference on Electrical and Computer Engineering","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126769385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-01DOI: 10.1109/ICECE.2014.7027008
Md. Saifuddin Faruk
In this paper, unconstraint adaptive frequency-domain equalizer (FDE) based on the constant-modulus algorithm (CMA) is investigated for equalization of linear transmission impairments in coherent optical receivers. With unrepeated 200-km transmission of 10-Gbaud quadrature phase-shift keying (QPSK) signal, it is verified that, compared with conventional constraint FDE, the proposed unconstraint FDE causes a very small sensitivity penalty; however, can be applied with much less computational complexity.
{"title":"Unconstraint adaptive frequency-domain equalizer for coherent optical receivers","authors":"Md. Saifuddin Faruk","doi":"10.1109/ICECE.2014.7027008","DOIUrl":"https://doi.org/10.1109/ICECE.2014.7027008","url":null,"abstract":"In this paper, unconstraint adaptive frequency-domain equalizer (FDE) based on the constant-modulus algorithm (CMA) is investigated for equalization of linear transmission impairments in coherent optical receivers. With unrepeated 200-km transmission of 10-Gbaud quadrature phase-shift keying (QPSK) signal, it is verified that, compared with conventional constraint FDE, the proposed unconstraint FDE causes a very small sensitivity penalty; however, can be applied with much less computational complexity.","PeriodicalId":335492,"journal":{"name":"8th International Conference on Electrical and Computer Engineering","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122550587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-01DOI: 10.1109/ICECE.2014.7026916
Ehsanur Rahman, A. Shadman, Kanak Datta, S. Biswas, Q. Khosru
In this paper, the Capacitance-Voltage (C-V) and Ballistic Current characteristics of arsenide based surface channel Quantum Well (QW) MOSFET were investigated. Self-consistent simulation was performed by solving coupled Schrödinger-Poisson equation incorporating wave function penetration into oxide. Although Experimental C-V and I-V characteristics of the Surface Channel QW MOSFET are available in recent literature, a self-consistent simulation based C-V and I-V characterization is yet to be reported. We studied some important parameters variation like oxide material, doping concentration and their impacts on C-V characteristics. We have also simulated carrier transport in the Ballistic limit using top of the barrier approach.
{"title":"Capacitance-Voltage characterization and semiclassical transport analysis of InxGa1−xAs surface channel Quantum Well MOSFET","authors":"Ehsanur Rahman, A. Shadman, Kanak Datta, S. Biswas, Q. Khosru","doi":"10.1109/ICECE.2014.7026916","DOIUrl":"https://doi.org/10.1109/ICECE.2014.7026916","url":null,"abstract":"In this paper, the Capacitance-Voltage (C-V) and Ballistic Current characteristics of arsenide based surface channel Quantum Well (QW) MOSFET were investigated. Self-consistent simulation was performed by solving coupled Schrödinger-Poisson equation incorporating wave function penetration into oxide. Although Experimental C-V and I-V characteristics of the Surface Channel QW MOSFET are available in recent literature, a self-consistent simulation based C-V and I-V characterization is yet to be reported. We studied some important parameters variation like oxide material, doping concentration and their impacts on C-V characteristics. We have also simulated carrier transport in the Ballistic limit using top of the barrier approach.","PeriodicalId":335492,"journal":{"name":"8th International Conference on Electrical and Computer Engineering","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128987950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-01DOI: 10.1109/ICECE.2014.7026831
R. K. Datta, S. Rahman
In the world of modern technology, newer sources of energy and new methods of power generation are two important area of interest for researchers and engineers. Recently a new method is established to generate power from the lost energy of a human during his/her locomotive period. A piezoelectric sensor based costly product is available in some developed countries which can generate power from human locomotive force, but it is not suitable for countries like Bangladesh where power demand is very high but economy is not highly developed. In this paper we will explain the design and construction method of a “Power Generating Slab” which can be used to generate power by establishing anywhere of the walking zone of human (roads, stairs, pavements, dais etc). This is done in a low cost process with locally available equipments (micro-generator, iron plate, rack pinion gear, free-wheeling system, spring etc). These slabs can easily sustain human weight when people walk along them. With a small deformation of spring, the weight (mechanical energy) of a human body is converted into electrical energy by rotating a micro-generator with the help of a `rotating shaft' coupled with it. From each foot step almost 10V-12V is generated. This energy is stored in a rechargeable battery which can be used as a power source to drive loads. Assembly of some power generating slabs can give better result. This is a method which is reusable and it will run for a longer period.
{"title":"Power Generating Slabs: Lost energy conversion of human locomotive force into electrical energy","authors":"R. K. Datta, S. Rahman","doi":"10.1109/ICECE.2014.7026831","DOIUrl":"https://doi.org/10.1109/ICECE.2014.7026831","url":null,"abstract":"In the world of modern technology, newer sources of energy and new methods of power generation are two important area of interest for researchers and engineers. Recently a new method is established to generate power from the lost energy of a human during his/her locomotive period. A piezoelectric sensor based costly product is available in some developed countries which can generate power from human locomotive force, but it is not suitable for countries like Bangladesh where power demand is very high but economy is not highly developed. In this paper we will explain the design and construction method of a “Power Generating Slab” which can be used to generate power by establishing anywhere of the walking zone of human (roads, stairs, pavements, dais etc). This is done in a low cost process with locally available equipments (micro-generator, iron plate, rack pinion gear, free-wheeling system, spring etc). These slabs can easily sustain human weight when people walk along them. With a small deformation of spring, the weight (mechanical energy) of a human body is converted into electrical energy by rotating a micro-generator with the help of a `rotating shaft' coupled with it. From each foot step almost 10V-12V is generated. This energy is stored in a rechargeable battery which can be used as a power source to drive loads. Assembly of some power generating slabs can give better result. This is a method which is reusable and it will run for a longer period.","PeriodicalId":335492,"journal":{"name":"8th International Conference on Electrical and Computer Engineering","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124751457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-01DOI: 10.1109/ICECE.2014.7027022
Md. Nazmul Hasan, Md. Soyaeb Hasan, M. Islam
p-InGaN epitaxial layer is crucially important for advanced electronic and optoelectronic devices. The activation energy (EA) of Mg-acceptor, universally accepted p-type dopant, and hole concentration (p) of Mg-doped InxGa1-xN alloys (x~0.4) have been investigated herein. The EA has been calculated using an equation almost fitted with experimental data available in literatures in which EA decreases with the increase in In content (x) in InxGa1-xN. The observed EA in Mg doped In0.4Ga0.6N alloys is about 41 meV which is few times smaller than Mg doped GaN, widely used active p-layer from III-nitride. The increased carrier concentration (p) due to increasing In content is near about 9.7×1018 cm-3 for x~0.4. The hole concentration starts to decrease at around the Mg concentration of 4.5×1019 cm-3. These results indicate that self-compensation occurs in Mg-doped InGaN at higher-doping levels.
{"title":"Low activation energy of Mg-doped InxGa1−xN (x∼0.4) and self-compensation modelling","authors":"Md. Nazmul Hasan, Md. Soyaeb Hasan, M. Islam","doi":"10.1109/ICECE.2014.7027022","DOIUrl":"https://doi.org/10.1109/ICECE.2014.7027022","url":null,"abstract":"p-InGaN epitaxial layer is crucially important for advanced electronic and optoelectronic devices. The activation energy (E<sub>A</sub>) of Mg-acceptor, universally accepted p-type dopant, and hole concentration (p) of Mg-doped In<sub>x</sub>Ga<sub>1-x</sub>N alloys (x~0.4) have been investigated herein. The E<sub>A</sub> has been calculated using an equation almost fitted with experimental data available in literatures in which E<sub>A</sub> decreases with the increase in In content (x) in In<sub>x</sub>Ga<sub>1-x</sub>N. The observed EA in Mg doped In<sub>0.4</sub>Ga<sub>0.6</sub>N alloys is about 41 meV which is few times smaller than Mg doped GaN, widely used active p-layer from III-nitride. The increased carrier concentration (p) due to increasing In content is near about 9.7×10<sup>18</sup> cm<sup>-3</sup> for x~0.4. The hole concentration starts to decrease at around the Mg concentration of 4.5×10<sup>19</sup> cm<sup>-3</sup>. These results indicate that self-compensation occurs in Mg-doped InGaN at higher-doping levels.","PeriodicalId":335492,"journal":{"name":"8th International Conference on Electrical and Computer Engineering","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126909847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Design and simulation of an Ultra Wide Band Low Noise Amplifier for 10.8 to 20.1 GHz applications is presented. A CG-CS topology is adopted in this work. CG is used for input matching in the whole band of operation. Output of the CG is fed to the CS amplifier input to increase the gain of the overall amplifier. The circuit is designed in IBM 130 nm CMOS Technology and simulated in HSPICE RF. The simulated results of the circuit shows 10.2 dB of forward gain (S21) with a bandwidth of 9.3 GHz, -18 dB input return loss (S11), reverse isolation (S12) of -44 dB and -32 dB of output matching parameter (S22) at center frequency, 14 GHz. This circuit exhibits a Nf of 5.03 dB at center frequency and 5.44 dB of average Nf. ICP is -17.2 dBm at the center frequency. It consumes only 7.38 mW when driven from 1.2 V source.
{"title":"An Ultra Wide Band Low Noise Amplifier for 10.8 to 20.1 GHz applications","authors":"Md Saiful, Arefin Mojumder, Md Sariful Islam, M. Ziaur, Rahman Khan","doi":"10.1109/ICECE.2014.7026924","DOIUrl":"https://doi.org/10.1109/ICECE.2014.7026924","url":null,"abstract":"Design and simulation of an Ultra Wide Band Low Noise Amplifier for 10.8 to 20.1 GHz applications is presented. A CG-CS topology is adopted in this work. CG is used for input matching in the whole band of operation. Output of the CG is fed to the CS amplifier input to increase the gain of the overall amplifier. The circuit is designed in IBM 130 nm CMOS Technology and simulated in HSPICE RF. The simulated results of the circuit shows 10.2 dB of forward gain (S21) with a bandwidth of 9.3 GHz, -18 dB input return loss (S11), reverse isolation (S12) of -44 dB and -32 dB of output matching parameter (S22) at center frequency, 14 GHz. This circuit exhibits a Nf of 5.03 dB at center frequency and 5.44 dB of average Nf. ICP is -17.2 dBm at the center frequency. It consumes only 7.38 mW when driven from 1.2 V source.","PeriodicalId":335492,"journal":{"name":"8th International Conference on Electrical and Computer Engineering","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121459250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-01DOI: 10.1109/ICECE.2014.7026897
M. S. Anower, S. Chowdhury, J. E. Giti, M. M. Haque
Due to the harshness of underwater environment, size estimation of underwater network is difficult using conventional protocol techniques. A statistical signal processing approach of size estimation is proposed for this purpose using cross-correlation of Gaussian signals, which is effective for any environment networks. Limited bandwidth of underwater communications channel poses constraint on using Gaussian signal, which has infinite bandwidth. The aim of this paper is to investigate the effect of this limited bandwidth in cross-correlation based underwater network size estimation using Gaussian signals with finite bandwidth.
{"title":"Effect of bandwidth in cross-correlation based underwater network size estimation","authors":"M. S. Anower, S. Chowdhury, J. E. Giti, M. M. Haque","doi":"10.1109/ICECE.2014.7026897","DOIUrl":"https://doi.org/10.1109/ICECE.2014.7026897","url":null,"abstract":"Due to the harshness of underwater environment, size estimation of underwater network is difficult using conventional protocol techniques. A statistical signal processing approach of size estimation is proposed for this purpose using cross-correlation of Gaussian signals, which is effective for any environment networks. Limited bandwidth of underwater communications channel poses constraint on using Gaussian signal, which has infinite bandwidth. The aim of this paper is to investigate the effect of this limited bandwidth in cross-correlation based underwater network size estimation using Gaussian signals with finite bandwidth.","PeriodicalId":335492,"journal":{"name":"8th International Conference on Electrical and Computer Engineering","volume":"113 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132003362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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