Calibration of the density-gradient TCAD model for germanium FinFETs

Hardik N Mehta, S. Lodha, U. Ganguly, S. Ganguly
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引用次数: 2

Abstract

We demonstrate that the density-gradient TCAD model can reproduce the results of multi-band Schrodinger-Poisson simulations for quantum confinement in scaled germanium FinFETs with a single fitting parameter that varies by surface orientation, but is independent of doping level and fin thickness.
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锗finfet密度梯度TCAD模型的校正
我们证明了密度梯度TCAD模型可以用单个拟合参数重现多波段薛定谔-泊松模拟结果,该参数随表面取向而变化,但与掺杂水平和翅片厚度无关。
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