Yield improvement of 3D ICs in the presence of defects in through signal vias

Rajeev K. Nain, Shantesh Pinge, M. Chrzanowska-Jeske
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引用次数: 5

Abstract

Through signal vias (TSVs) in 3D ICs suffer from thermo-mechanical stress, and may fail or attain plasticity resulting in significant yield loss. We present a novel set of strategies for yield improvement in the presence of defects in through signal vias in heterogeneous 3D system-on-chip. Monte-Carlo simulation results show that our strategy can improve the yield of 3D ICs significantly. Furthermore, we estimate the parametric yield and present a quantitative analysis of the impact of our approach on chip area, power, performance and chip revenue that can improve profitability. Our results suggest that the proposed strategies can be very useful in yield-aware 3D design.
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信号通孔存在缺陷时三维集成电路良率的提高
三维集成电路中的信号通孔(tsv)受到热机械应力的影响,可能会失效或达到塑性,从而导致显着的产量损失。我们提出了一套新的策略,以提高在异质三维片上系统的通过信号通孔存在缺陷的良率。蒙特卡罗仿真结果表明,该策略可以显著提高三维集成电路的成品率。此外,我们估计了参数产量,并对我们的方法对芯片面积、功率、性能和芯片收入的影响进行了定量分析,从而提高了盈利能力。我们的研究结果表明,所提出的策略在产量敏感的3D设计中非常有用。
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