M. Rafik, G. Ribes, D. Roy, S. Kalpat, G. Ghibaudo
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引用次数: 2
Abstract
In this paper, stress induced leakage current under positive gate voltage is investigated. It turns out that it is caused by bulk defects that are also responsible for breakdown. Moreover, it appears that depending on the gate voltage, erroneous estimation could be made and could affect the conclusions on the reliability
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