J. Nappi, A. Ovtchinnikov, H. Asonen, S. Heinemann, F. Daiminger
{"title":"High power Al-free 808 nm laser bars","authors":"J. Nappi, A. Ovtchinnikov, H. Asonen, S. Heinemann, F. Daiminger","doi":"10.1109/LEOS.1996.565115","DOIUrl":null,"url":null,"abstract":"We have grown Al-free GaInAsP/GaInP 808 nm strained single quantum well laser structures by the gas source molecular beam epitaxy method. Processed laser bars are shown to possess very good performance in terms of efficiency and short term reliability. They could replace AlGaAs laser bars in high power applications if the future long term reliability tests correlate with the present short term reliability data.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LEOS.1996.565115","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
We have grown Al-free GaInAsP/GaInP 808 nm strained single quantum well laser structures by the gas source molecular beam epitaxy method. Processed laser bars are shown to possess very good performance in terms of efficiency and short term reliability. They could replace AlGaAs laser bars in high power applications if the future long term reliability tests correlate with the present short term reliability data.