High power Al-free 808 nm laser bars

J. Nappi, A. Ovtchinnikov, H. Asonen, S. Heinemann, F. Daiminger
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引用次数: 3

Abstract

We have grown Al-free GaInAsP/GaInP 808 nm strained single quantum well laser structures by the gas source molecular beam epitaxy method. Processed laser bars are shown to possess very good performance in terms of efficiency and short term reliability. They could replace AlGaAs laser bars in high power applications if the future long term reliability tests correlate with the present short term reliability data.
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高功率无铝808nm激光棒
采用气源分子束外延的方法制备了无al GaInAsP/GaInP 808 nm应变单量子阱激光器结构。加工后的激光棒在效率和短期可靠性方面具有很好的性能。如果未来的长期可靠性测试与目前的短期可靠性数据相关,它们可以取代高功率应用中的AlGaAs激光棒。
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High bandwidth polymer modulators Properties of small-aperture selectively oxidized VCSELs Lasing characteristics of GaAs/AlGaAs quantum wire laser and its array with an effective p-n junction current blocking layer Near-field analysis of beam properties of InGaAs ridge lasers Monolithic integration and individually-optimized operation of In/sub 0.2/Ga/sub 0.8/As vertical-cavity surface-emitting lasers and resonance-enhanced quantum well photodetectors
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