S. Kupke, S. Knebel, G. Roll, S. Slesazeck, T. Mikolajick, G. Krause, G. Kurz
{"title":"OFF-state induced threshold voltage relaxation after PBTI stress","authors":"S. Kupke, S. Knebel, G. Roll, S. Slesazeck, T. Mikolajick, G. Krause, G. Kurz","doi":"10.1109/IIRW.2012.6468928","DOIUrl":null,"url":null,"abstract":"The influence of different relaxation biases on positive bias temperature instability (PBTI) recovery is investigated. The threshold voltage (Vth) relaxation after stress is found to be accelerated by OFF-state bias in comparison to zero volt recovery. 2D device simulations evidence an increase in the drain side channel potential as well as an increase in the minimum potential for short channel devices. The relaxation effect is attributed to an enhanced detrapping of charge carriers by the drain-gate electrical field and becomes significant for short channel device below 0.1 μm length.","PeriodicalId":165120,"journal":{"name":"2012 IEEE International Integrated Reliability Workshop Final Report","volume":"122 5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Integrated Reliability Workshop Final Report","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIRW.2012.6468928","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11
Abstract
The influence of different relaxation biases on positive bias temperature instability (PBTI) recovery is investigated. The threshold voltage (Vth) relaxation after stress is found to be accelerated by OFF-state bias in comparison to zero volt recovery. 2D device simulations evidence an increase in the drain side channel potential as well as an increase in the minimum potential for short channel devices. The relaxation effect is attributed to an enhanced detrapping of charge carriers by the drain-gate electrical field and becomes significant for short channel device below 0.1 μm length.
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