{"title":"Additively Manufactured Metal-Insulator-Metal Capacitors using a High-K Dielectric Paste","authors":"Omer F. Firat, Jing Wang, T. Weller","doi":"10.1109/AP-S/USNC-URSI47032.2022.9887281","DOIUrl":null,"url":null,"abstract":"This paper presents a new fabrication method for metal-insulator-metal (MIM) capacitors. Micro-dispensing is used to realize the additively manufactured (AM) passive devices on a Kapton tape. These 3D printed capacitors are fabricated using Dupont CB028 to form the conductive layers and Creative Materials 128-49 as the dielectric layer. A 0.55 mm2 capacitor is realized and shows a value of 7.12 pF with the self-resonance of 6 GHz and Q factor of 103. This capacitor could be embedded into large area RF and microwave systems.","PeriodicalId":371560,"journal":{"name":"2022 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting (AP-S/URSI)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting (AP-S/URSI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/AP-S/USNC-URSI47032.2022.9887281","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper presents a new fabrication method for metal-insulator-metal (MIM) capacitors. Micro-dispensing is used to realize the additively manufactured (AM) passive devices on a Kapton tape. These 3D printed capacitors are fabricated using Dupont CB028 to form the conductive layers and Creative Materials 128-49 as the dielectric layer. A 0.55 mm2 capacitor is realized and shows a value of 7.12 pF with the self-resonance of 6 GHz and Q factor of 103. This capacitor could be embedded into large area RF and microwave systems.
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