Biomedical 3xVDD current micro-stimulator using standard 0.35um CMOS process

Tzung-Je Lee, Hsin-Chang Chen
{"title":"Biomedical 3xVDD current micro-stimulator using standard 0.35um CMOS process","authors":"Tzung-Je Lee, Hsin-Chang Chen","doi":"10.1109/CIRCUITSANDSYSTEMS.2013.6671638","DOIUrl":null,"url":null,"abstract":"This paper proposes a 3xVDD current micro-stimulator using the 3.3 V devices in standard 0.35 μm CMOS process for the implantable biomedical application. Traditional implantable biomedical micro-stimulators suffer from the reliability and saturation problem when the high impedance electrode and tissue are driven. By using the HV (high-voltage) protection circuit, the proposed design can avoid the gate-oxide overstress and reliability problem due to the 3xVDD voltage supply. The proposed design is applied to the 3xVDD power supply voltage and provides a maximum stimulating current of 108 uA with the output voltage swing of 7.56 V for the high-impedance load of 70 kΩ. The maximum stimulating current frequency is simulated to be 100 kHz.","PeriodicalId":436232,"journal":{"name":"2013 IEEE International Conference on Circuits and Systems (ICCAS)","volume":"143 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Conference on Circuits and Systems (ICCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CIRCUITSANDSYSTEMS.2013.6671638","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

This paper proposes a 3xVDD current micro-stimulator using the 3.3 V devices in standard 0.35 μm CMOS process for the implantable biomedical application. Traditional implantable biomedical micro-stimulators suffer from the reliability and saturation problem when the high impedance electrode and tissue are driven. By using the HV (high-voltage) protection circuit, the proposed design can avoid the gate-oxide overstress and reliability problem due to the 3xVDD voltage supply. The proposed design is applied to the 3xVDD power supply voltage and provides a maximum stimulating current of 108 uA with the output voltage swing of 7.56 V for the high-impedance load of 70 kΩ. The maximum stimulating current frequency is simulated to be 100 kHz.
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生物医学3xVDD电流微刺激器采用标准0.35um CMOS工艺
本文提出了一种3xVDD电流微刺激器,采用标准0.35 μm CMOS工艺的3.3 V器件,用于植入式生物医学应用。传统的植入式生物医学微刺激器在驱动高阻抗电极和组织时存在可靠性和饱和问题。本设计采用高压保护电路,避免了3xVDD电压供应带来的栅极氧化过应力和可靠性问题。所提出的设计适用于3xVDD电源电压,在70 kΩ高阻抗负载下提供最大刺激电流为108 uA,输出电压摆幅为7.56 V。模拟最大激励电流频率为100khz。
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