{"title":"Biomedical 3xVDD current micro-stimulator using standard 0.35um CMOS process","authors":"Tzung-Je Lee, Hsin-Chang Chen","doi":"10.1109/CIRCUITSANDSYSTEMS.2013.6671638","DOIUrl":null,"url":null,"abstract":"This paper proposes a 3xVDD current micro-stimulator using the 3.3 V devices in standard 0.35 μm CMOS process for the implantable biomedical application. Traditional implantable biomedical micro-stimulators suffer from the reliability and saturation problem when the high impedance electrode and tissue are driven. By using the HV (high-voltage) protection circuit, the proposed design can avoid the gate-oxide overstress and reliability problem due to the 3xVDD voltage supply. The proposed design is applied to the 3xVDD power supply voltage and provides a maximum stimulating current of 108 uA with the output voltage swing of 7.56 V for the high-impedance load of 70 kΩ. The maximum stimulating current frequency is simulated to be 100 kHz.","PeriodicalId":436232,"journal":{"name":"2013 IEEE International Conference on Circuits and Systems (ICCAS)","volume":"143 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Conference on Circuits and Systems (ICCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CIRCUITSANDSYSTEMS.2013.6671638","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper proposes a 3xVDD current micro-stimulator using the 3.3 V devices in standard 0.35 μm CMOS process for the implantable biomedical application. Traditional implantable biomedical micro-stimulators suffer from the reliability and saturation problem when the high impedance electrode and tissue are driven. By using the HV (high-voltage) protection circuit, the proposed design can avoid the gate-oxide overstress and reliability problem due to the 3xVDD voltage supply. The proposed design is applied to the 3xVDD power supply voltage and provides a maximum stimulating current of 108 uA with the output voltage swing of 7.56 V for the high-impedance load of 70 kΩ. The maximum stimulating current frequency is simulated to be 100 kHz.