{"title":"Microelectromechanical (MEM) switch and inverter for digital IC applications","authors":"W. Jang, O. Kwon, J. Lee, Jun‐Bo Yoon","doi":"10.1109/ASSCC.2007.4425779","DOIUrl":null,"url":null,"abstract":"Microelectromechanical (MEM) switch and MEM switch-based inverter was proposed and fabricated using a CMOS-compatible poly-Si surface micromachining process. The key concept is developed that the MEM switch-based inverter with the same implementation as CMOS inverter has a high noise immunity and low power dissipation because the MEM switch can clearly eliminate the leakage current when the device is off. The fabricated MEM switch showed ideal on/off characteristics with a sub-threshold swing of 4 m V/decade, an essentially zero off current, and a very high on/off current ratio over 10 s and also the MEM switch-based inverter showed ideal voltage transfer characteristics.","PeriodicalId":186095,"journal":{"name":"2007 IEEE Asian Solid-State Circuits Conference","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Asian Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2007.4425779","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
Microelectromechanical (MEM) switch and MEM switch-based inverter was proposed and fabricated using a CMOS-compatible poly-Si surface micromachining process. The key concept is developed that the MEM switch-based inverter with the same implementation as CMOS inverter has a high noise immunity and low power dissipation because the MEM switch can clearly eliminate the leakage current when the device is off. The fabricated MEM switch showed ideal on/off characteristics with a sub-threshold swing of 4 m V/decade, an essentially zero off current, and a very high on/off current ratio over 10 s and also the MEM switch-based inverter showed ideal voltage transfer characteristics.
采用兼容cmos的多晶硅表面微加工工艺，提出并制作了微机电开关和基于微机电开关的逆变器。提出了基于MEM开关的逆变器的关键概念，其实现与CMOS逆变器相同，由于MEM开关可以在器件关闭时清晰地消除漏电流，因此具有高抗噪性和低功耗。所制备的MEM开关具有理想的开/关特性，其亚阈值摆幅为4 m V/ 10年，关断电流基本为零，在10 s内具有很高的开/关电流比，并且基于MEM开关的逆变器具有理想的电压转移特性。
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
