M. Müller, Thomas Luschmann, A. Faltermeier, S. Weichselbaumer, L. Koch, Gerhard B. P. Huber, H. Schumacher, N. Ubbelohde, D. Reifert, T. Scheller, F. Deppe, A. Marx, S. Filipp, M. Althammer, R. Gross, H. Huebl
{"title":"Magnetic field robust high quality factor NbTiN superconducting microwave resonators","authors":"M. Müller, Thomas Luschmann, A. Faltermeier, S. Weichselbaumer, L. Koch, Gerhard B. P. Huber, H. Schumacher, N. Ubbelohde, D. Reifert, T. Scheller, F. Deppe, A. Marx, S. Filipp, M. Althammer, R. Gross, H. Huebl","doi":"10.1088/2633-4356/ac50f8","DOIUrl":null,"url":null,"abstract":"\n We systematically study the performance of compact lumped element planar microwave $\\mathrm{Nb_{70}Ti_{30}N}$ (NbTiN) resonators operating at 5 GHz in external in-plane magnetic fields up to 440 mT, a broad temperature regime from 2.2 K up to 13 K, as well as mK temperatures. For comparison, the resonators have been fabricated on thermally oxidized and pristine, (001) oriented silicon substrates. When operating the resonators in the multi-photon regime at $T=2.2$ K, we find internal quality factors $Q_{\\mathrm{int}}\\simeq$ $2\\cdot10^5$ for NbTiN resonators grown on pristine Si substrates. In addition, we investigate the $Q$-factors of the resonators on pristine Si substrates at millikelvin temperatures to asses their applicability for quantum applications. We find $Q_{\\mathrm{int}}\\simeq$ $2\\cdot10^5$ in the single photon regime and $Q_{\\mathrm{int}}\\simeq$ $5\\cdot10^5$ in the high power regime at $T=7$ mK. From the excellent performance of our resonators over a broad temperature and magnetic field range, we conclude that NbTiN deposited on Si (100) substrates, where the suface oxide has been removed, constitutes a promising material platform for electron spin resonance and ferromagnetic resonance experiments using superconducting planar microwave resonators.","PeriodicalId":345750,"journal":{"name":"Materials for Quantum Technology","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials for Quantum Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/2633-4356/ac50f8","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
We systematically study the performance of compact lumped element planar microwave $\mathrm{Nb_{70}Ti_{30}N}$ (NbTiN) resonators operating at 5 GHz in external in-plane magnetic fields up to 440 mT, a broad temperature regime from 2.2 K up to 13 K, as well as mK temperatures. For comparison, the resonators have been fabricated on thermally oxidized and pristine, (001) oriented silicon substrates. When operating the resonators in the multi-photon regime at $T=2.2$ K, we find internal quality factors $Q_{\mathrm{int}}\simeq$ $2\cdot10^5$ for NbTiN resonators grown on pristine Si substrates. In addition, we investigate the $Q$-factors of the resonators on pristine Si substrates at millikelvin temperatures to asses their applicability for quantum applications. We find $Q_{\mathrm{int}}\simeq$ $2\cdot10^5$ in the single photon regime and $Q_{\mathrm{int}}\simeq$ $5\cdot10^5$ in the high power regime at $T=7$ mK. From the excellent performance of our resonators over a broad temperature and magnetic field range, we conclude that NbTiN deposited on Si (100) substrates, where the suface oxide has been removed, constitutes a promising material platform for electron spin resonance and ferromagnetic resonance experiments using superconducting planar microwave resonators.