The impact of back bias on the floating body effect in UTBOX SOI devices for 1T-FBRAM memory applications

Abstract

In this paper, the floating body effect used in one Transistor Floating Body Random Access Memory (1T-FBRAM) is experimentally investigated on Fully Depleted Ultra Thin Box Silicon On Insulator devices (FD UTBOX SOI). It is shown that using a positive back bias allows further scaling of 1T-FBRAM by increasing the current sense margin as well as the VG read window. Furthermore, the VD operating bias is reduced to the minimal drain voltage needed for impact ionization, which is beneficial for reliability.