Influence of increasing deposition temperature on opto-electrical properties of amorphous carbon thin film

H. Hussin, M. Zakaria, F. Mohamad, M. Rusop, M. Muhamad
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引用次数: 1

Abstract

Amorphous carbon (a-C) thin films were deposited on silicon (Si) substrate by pyrolysing camphor oil at various temperatures with thermal chemical vapor deposition (CVD) technique. The deposited a-C thin films were characterized by Current-Voltage (I-V) Measurement and UV-VIS-NIR Spectrophotometer. The electrical and optical properties of these films have been studied. It was found that increasing deposition temperature had influence on the a-C thin films properties. In addition the carrier gas flow showed a secondary impact on the properties of a-C thin films. The resistivity of a-C thin films decreases when the deposition temperature increases. However, at higher deposition temperature the conductivity increases due to the formation of more disorder sp2 carbon site.
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提高沉积温度对非晶碳薄膜光电性能的影响
采用热化学气相沉积(CVD)技术,在不同温度下对樟脑油进行热解,在硅(Si)衬底上沉积了非晶碳(a-C)薄膜。采用电流-电压(I-V)测量和紫外-可见-近红外分光光度计对沉积的a-C薄膜进行了表征。研究了这些薄膜的电学和光学性质。研究发现,提高沉积温度对a-C薄膜的性能有影响。此外,载气流量对a- c薄膜的性能也有二次影响。随着沉积温度的升高,a-C薄膜的电阻率降低。然而,在较高的沉积温度下,由于形成更多无序的sp2碳位,电导率增加。
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