{"title":"Double Gate High Electron Mobility Transistors","authors":"Ajith Ravindran","doi":"10.1201/9780429460043-16","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":235718,"journal":{"name":"Handbook for III-V High Electron Mobility Transistor Technologies","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Handbook for III-V High Electron Mobility Transistor Technologies","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1201/9780429460043-16","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
