STT-MRAM - Status and Outlook

D. Worledge, C. Safranski, G. Hu, J. Sun, P. Hashemi, S. Brown, L. Buzi, C. D'Emic, M. Gottwald, O. Gunawan, H. Jung, S. Karimeddiny, J. Kim, P. Trouilloud
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引用次数: 2

Abstract

We review the use-case and requirements for Spin-Transfer-Torque MRAM (STT-MRAM) to replace SRAM in last-level-cache. We then describe recent work on double magnetic tunnel junctions and double spin-torque magnetic tunnel junctions to reduce the MRAM switching current. The latter devices open up the possibility of reducing the switching current by a factor of two while maintaining high magnetoresistance, which could enable the use of STT-MRAM in last-level-cache.
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STT-MRAM -现状与展望
我们回顾了自旋转移扭矩MRAM (STT-MRAM)在最后一级缓存中取代SRAM的用例和要求。然后,我们描述了最近在双磁隧道结和双自旋转矩磁隧道结方面的工作,以减少MRAM的开关电流。后一种器件开辟了将开关电流降低两倍的可能性,同时保持高磁阻,这可以使STT-MRAM在最后一级缓存中使用。
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