In writing process of heat-assisted magnetic recording (HAMR) disk, the pulse laser can cause degradation of PFPE lubricant on the surface of the disk [1], indirectly leading to deterioration of the tribological performance. The degradation of PFPE lubricants under different conditions has been investigated [2]–[3]. However, the thermal degradation mechanism of D-4OH lubricant has not yet been clearly clarified. Understanding the thermal degradation mechanism of D-4OH lubricant is beneficial for the optimization of HAMR head-disk interface (HDI).
{"title":"Molecular dynamic simulation on the thermal degradation of PFPE lubricant for HAMR disk","authors":"Qingkang Liu, Kaihao Huang, Xiaohong Zhu, G. Wang, Ziyue Wang, Wenkai Wu","doi":"10.1109/TMRC56419.2022.9918172","DOIUrl":"https://doi.org/10.1109/TMRC56419.2022.9918172","url":null,"abstract":"In writing process of heat-assisted magnetic recording (HAMR) disk, the pulse laser can cause degradation of PFPE lubricant on the surface of the disk [1], indirectly leading to deterioration of the tribological performance. The degradation of PFPE lubricants under different conditions has been investigated [2]–[3]. However, the thermal degradation mechanism of D-4OH lubricant has not yet been clearly clarified. Understanding the thermal degradation mechanism of D-4OH lubricant is beneficial for the optimization of HAMR head-disk interface (HDI).","PeriodicalId":432413,"journal":{"name":"2022 IEEE 33rd Magnetic Recording Conference (TMRC)","volume":"33 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129738038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-08-01DOI: 10.1109/TMRC56419.2022.9918607
D. Worledge, C. Safranski, G. Hu, J. Sun, P. Hashemi, S. Brown, L. Buzi, C. D'Emic, M. Gottwald, O. Gunawan, H. Jung, S. Karimeddiny, J. Kim, P. Trouilloud
We review the use-case and requirements for Spin-Transfer-Torque MRAM (STT-MRAM) to replace SRAM in last-level-cache. We then describe recent work on double magnetic tunnel junctions and double spin-torque magnetic tunnel junctions to reduce the MRAM switching current. The latter devices open up the possibility of reducing the switching current by a factor of two while maintaining high magnetoresistance, which could enable the use of STT-MRAM in last-level-cache.
{"title":"STT-MRAM - Status and Outlook","authors":"D. Worledge, C. Safranski, G. Hu, J. Sun, P. Hashemi, S. Brown, L. Buzi, C. D'Emic, M. Gottwald, O. Gunawan, H. Jung, S. Karimeddiny, J. Kim, P. Trouilloud","doi":"10.1109/TMRC56419.2022.9918607","DOIUrl":"https://doi.org/10.1109/TMRC56419.2022.9918607","url":null,"abstract":"We review the use-case and requirements for Spin-Transfer-Torque MRAM (STT-MRAM) to replace SRAM in last-level-cache. We then describe recent work on double magnetic tunnel junctions and double spin-torque magnetic tunnel junctions to reduce the MRAM switching current. The latter devices open up the possibility of reducing the switching current by a factor of two while maintaining high magnetoresistance, which could enable the use of STT-MRAM in last-level-cache.","PeriodicalId":432413,"journal":{"name":"2022 IEEE 33rd Magnetic Recording Conference (TMRC)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128502287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-08-01DOI: 10.1109/TMRC56419.2022.9918621
Qingkang Liu, Zhen Chen, Xiaohong Zhu, G. Wang, Liang Peng, Yufei Hu
Heat-assisted magnetic recording (HAMR) is a revolutionary technology that can increase the capacity of disks. The development of HAMR technology has put forward higher requirements on the thermal stability of lubricants and the adsorption performance between the lubricants and amorphous carbon (a-C) films. Function-alization of the lubricants strongly affected the desorption performance of the lubricants on the disk surface [1]. The adsorption films of D-4OH lubricants exhibited a monolayer structure [2]. Smith et al. [3] found a superior intermolecular interaction between lubricant end groups. Yang et al. [4] found lubricants accumulation on the surface of the medium during laser off in HAMR writing operations. Revealing the adsorption mechanism of D-4OH lubricant on the surface of a-C films can facilitate the development of HAMR technology.
{"title":"Molecular dynamic simulation on the adsorption between D-4OH lubricant and amorphous carbon film for HAMR disk","authors":"Qingkang Liu, Zhen Chen, Xiaohong Zhu, G. Wang, Liang Peng, Yufei Hu","doi":"10.1109/TMRC56419.2022.9918621","DOIUrl":"https://doi.org/10.1109/TMRC56419.2022.9918621","url":null,"abstract":"Heat-assisted magnetic recording (HAMR) is a revolutionary technology that can increase the capacity of disks. The development of HAMR technology has put forward higher requirements on the thermal stability of lubricants and the adsorption performance between the lubricants and amorphous carbon (a-C) films. Function-alization of the lubricants strongly affected the desorption performance of the lubricants on the disk surface [1]. The adsorption films of D-4OH lubricants exhibited a monolayer structure [2]. Smith et al. [3] found a superior intermolecular interaction between lubricant end groups. Yang et al. [4] found lubricants accumulation on the surface of the medium during laser off in HAMR writing operations. Revealing the adsorption mechanism of D-4OH lubricant on the surface of a-C films can facilitate the development of HAMR technology.","PeriodicalId":432413,"journal":{"name":"2022 IEEE 33rd Magnetic Recording Conference (TMRC)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122247642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-08-01DOI: 10.1109/TMRC56419.2022.9918584
B. York, P. Hai, Q. Le, C. Hwang, S. Okamura, M. Gribelyuk, X. Xu, K. Nguyen, H. Ho, J. Sasaki, X. Liu, S. Le, M. Ho, H. Takano, R. Simmons
We have fabricated simple bottom-SOT film stacks using doped BiSbX TI materials as the SOT layer with novel high resistance nucleation/growth and migration barrier layers. The thin buffer layer produces a very strong fiber axis (012) texture (rocking curve ~ 7 degs. FWHM). The migration barrier between the FM and The SOT layers significantly reduces both Bi,Sb migration out of the SOT and electrical shunting across the FM. The seed and capping layers have high resistivities (~ 250 uohm-cm), as do the thin migration and nucleation/growth layers (resistivities ~ > 300 uohm-cm). The migration barrier layer is critical to reduce intermixing between SOT and FM layer reducing SOT surface roughness, sharpening the SOT-interlayer interface, and to reduce FM shunting effects. Cross Hall-bar patterns 20umX60um (WxL) were fabricated from the simple film stacks shown schematically in figure 1. Very high SHA values of about 24 (see figs. 4b., and 5b.) were measured on two differently doped BiSbX SOT materials.
{"title":"High Spin Hall Angle doped BiSbX Topological Insulators using novel high resistive growth and migration barrier layers","authors":"B. York, P. Hai, Q. Le, C. Hwang, S. Okamura, M. Gribelyuk, X. Xu, K. Nguyen, H. Ho, J. Sasaki, X. Liu, S. Le, M. Ho, H. Takano, R. Simmons","doi":"10.1109/TMRC56419.2022.9918584","DOIUrl":"https://doi.org/10.1109/TMRC56419.2022.9918584","url":null,"abstract":"We have fabricated simple bottom-SOT film stacks using doped BiSbX TI materials as the SOT layer with novel high resistance nucleation/growth and migration barrier layers. The thin buffer layer produces a very strong fiber axis (012) texture (rocking curve ~ 7 degs. FWHM). The migration barrier between the FM and The SOT layers significantly reduces both Bi,Sb migration out of the SOT and electrical shunting across the FM. The seed and capping layers have high resistivities (~ 250 uohm-cm), as do the thin migration and nucleation/growth layers (resistivities ~ > 300 uohm-cm). The migration barrier layer is critical to reduce intermixing between SOT and FM layer reducing SOT surface roughness, sharpening the SOT-interlayer interface, and to reduce FM shunting effects. Cross Hall-bar patterns 20umX60um (WxL) were fabricated from the simple film stacks shown schematically in figure 1. Very high SHA values of about 24 (see figs. 4b., and 5b.) were measured on two differently doped BiSbX SOT materials.","PeriodicalId":432413,"journal":{"name":"2022 IEEE 33rd Magnetic Recording Conference (TMRC)","volume":"172 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116154838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-08-01DOI: 10.1109/tmrc56419.2022.9918580
E. Roddick, M. Kief, Mikhail Amelyushkin
We present a new Advanced Storage Research Consortium (ASRC) HDD Technology Roadmap. Technology leaders from member institutions of ASRC met and agreed on the roadmap presented here. The roadmap extends to the year 2035 and outlines the building blocks needed for future generations of hard disk drives.
{"title":"A new Advanced Storage Research Consortium HDD Technology Roadmap","authors":"E. Roddick, M. Kief, Mikhail Amelyushkin","doi":"10.1109/tmrc56419.2022.9918580","DOIUrl":"https://doi.org/10.1109/tmrc56419.2022.9918580","url":null,"abstract":"We present a new Advanced Storage Research Consortium (ASRC) HDD Technology Roadmap. Technology leaders from member institutions of ASRC met and agreed on the roadmap presented here. The roadmap extends to the year 2035 and outlines the building blocks needed for future generations of hard disk drives.","PeriodicalId":432413,"journal":{"name":"2022 IEEE 33rd Magnetic Recording Conference (TMRC)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127615121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-08-01DOI: 10.1109/TMRC56419.2022.9918569
H. Saito
A new signal processing scheme for the heated-dot magnetic recording (HDMR) system with double-layered bit-patterned media (BPM) is proposed in this research. This proposed signal processing scheme is applicable to multi-track recording system and uses two cascaded one-dimensional (1D) log-likelihood ratio (LLR) detectors. The proposed scheme is capable of detecting data sequences recorded on two tracks simultaneously and detects the data sequence recorded on each layer in order. The effective transmission rate of the HDMR system with two-track simultaneous detection and double-layered BPM can be increased four times that of the HDMR system with single-layered BPM. It is shown that the error rate performance of the HDMR system with 1D LLR two-track simultaneous detection and double-layered BPM shows a significant improvement over the HDMR system with the conventional 1D LLR detection and single-layered BPM by computer simulation.
{"title":"Multidimensional Signal Processing for High Areal Density Heated-Dot Magnetic Recording","authors":"H. Saito","doi":"10.1109/TMRC56419.2022.9918569","DOIUrl":"https://doi.org/10.1109/TMRC56419.2022.9918569","url":null,"abstract":"A new signal processing scheme for the heated-dot magnetic recording (HDMR) system with double-layered bit-patterned media (BPM) is proposed in this research. This proposed signal processing scheme is applicable to multi-track recording system and uses two cascaded one-dimensional (1D) log-likelihood ratio (LLR) detectors. The proposed scheme is capable of detecting data sequences recorded on two tracks simultaneously and detects the data sequence recorded on each layer in order. The effective transmission rate of the HDMR system with two-track simultaneous detection and double-layered BPM can be increased four times that of the HDMR system with single-layered BPM. It is shown that the error rate performance of the HDMR system with 1D LLR two-track simultaneous detection and double-layered BPM shows a significant improvement over the HDMR system with the conventional 1D LLR detection and single-layered BPM by computer simulation.","PeriodicalId":432413,"journal":{"name":"2022 IEEE 33rd Magnetic Recording Conference (TMRC)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128590541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-08-01DOI: 10.1109/TMRC56419.2022.9918544
G. Chen, C. Ophus, P. Murray, C. J. Jensen, A. Quintana, M. Robertson, E. C. Burks, D. Gilbert, J. Malloy, D. Bhattacharya, Z. Chen, G. Yin, A. Schmid, Kai Liu
Magneto-ionics has shown promise to address the energy challenges in nanoelectronics, as materials properties may be manipulated by the application of an electric field through controlled motion of ions. Here we illustrate magneto-ionic control of Dzyaloshinskii-Moriya interaction, chiral spin textures, exchange bias, and their potential applications in 3-dimensional information storage.
{"title":"Magneto-Ionic Control of Spin Textures and Interfaces","authors":"G. Chen, C. Ophus, P. Murray, C. J. Jensen, A. Quintana, M. Robertson, E. C. Burks, D. Gilbert, J. Malloy, D. Bhattacharya, Z. Chen, G. Yin, A. Schmid, Kai Liu","doi":"10.1109/TMRC56419.2022.9918544","DOIUrl":"https://doi.org/10.1109/TMRC56419.2022.9918544","url":null,"abstract":"Magneto-ionics has shown promise to address the energy challenges in nanoelectronics, as materials properties may be manipulated by the application of an electric field through controlled motion of ions. Here we illustrate magneto-ionic control of Dzyaloshinskii-Moriya interaction, chiral spin textures, exchange bias, and their potential applications in 3-dimensional information storage.","PeriodicalId":432413,"journal":{"name":"2022 IEEE 33rd Magnetic Recording Conference (TMRC)","volume":"107 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122914530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-08-01DOI: 10.1109/TMRC56419.2022.9918546
Wenyu Chen, Zhenyao Tang, A. Kaizu, S. Kawasaki, Kevin L.L. Man, Cathy S.Y. Mo, T. Roppongi, M. Dovek
With the requirement of increasing data areal density in hard disk drive applications, microwave assisted magnetic recording (MAMR) [1] has become one of the effective approaches that reduce recording bit size. By incorporating a spin torque oscillator (STO) device in the write gap (WG) between the main writer pole (MP) and the write shield (WS), one or more large magnetic moment layers, called field generation layers (FGL), are driven into large angle oscillations, by the spin-transfer-torque (STT) interactions with the adjacent spin injection layers (SIL), for a sufficiently large radiofrequency (rf) field output to the recording media. A dual oscillator design [2], shown in Fig. 1(a) was proposed recently with a pair of FGLs oscillating out of phase so that the detrimental component of the rf field [3] perpendicular to the air bearing surface (ABS) is mostly canceled, but the component in the direction along the written track is enhanced. Micromagnetic simulations of the magnetic device inside the WG were conducted incorporating STT interactions between the magnetic layers. Simulation and measurement results of different dual oscillator designs will be discussed in this talk.
{"title":"Spin-Torque-Oscillator Designs in Microwave-Assisted Magnetic Recording","authors":"Wenyu Chen, Zhenyao Tang, A. Kaizu, S. Kawasaki, Kevin L.L. Man, Cathy S.Y. Mo, T. Roppongi, M. Dovek","doi":"10.1109/TMRC56419.2022.9918546","DOIUrl":"https://doi.org/10.1109/TMRC56419.2022.9918546","url":null,"abstract":"With the requirement of increasing data areal density in hard disk drive applications, microwave assisted magnetic recording (MAMR) [1] has become one of the effective approaches that reduce recording bit size. By incorporating a spin torque oscillator (STO) device in the write gap (WG) between the main writer pole (MP) and the write shield (WS), one or more large magnetic moment layers, called field generation layers (FGL), are driven into large angle oscillations, by the spin-transfer-torque (STT) interactions with the adjacent spin injection layers (SIL), for a sufficiently large radiofrequency (rf) field output to the recording media. A dual oscillator design [2], shown in Fig. 1(a) was proposed recently with a pair of FGLs oscillating out of phase so that the detrimental component of the rf field [3] perpendicular to the air bearing surface (ABS) is mostly canceled, but the component in the direction along the written track is enhanced. Micromagnetic simulations of the magnetic device inside the WG were conducted incorporating STT interactions between the magnetic layers. Simulation and measurement results of different dual oscillator designs will be discussed in this talk.","PeriodicalId":432413,"journal":{"name":"2022 IEEE 33rd Magnetic Recording Conference (TMRC)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126949223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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