V. Belyakov, G. Zebrev, I. N. Shvetzov-Shilovsky, R. G. Useinov
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引用次数: 0
Abstract
The postirradiation response of the MOSFET's transconductance and logarithmic slope has been studied as a function of measurement temperatures. It is found that the temperature dependence of the postirradiation change in transconductance cannot be accounted for by the occurrence of additional scattering centers. These results suggest that mainly an additional recharging through the radiation-induced interface traps rather than a change in microscopic mobility determine the postirradiation variation of transconductance. An analysis of the effect and a convenient procedure for parameter extraction are presented.
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