A low-voltage high contact force RF-MEMS switch

2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535) Pub Date : 2004-06-06 DOI:10.1109/MWSYM.2004.1336047

N. Nishijima, Juo-Jung Hung, Gabriel M. Rebeiz

引用次数: 28

Abstract

This paper describes a novel structure for an electro-static actuated RF-MEMS metal-contact switch which achieves low-voltage actuations. Using a cantilever and placing a pull-down electrode outside the contact dimples, the actuation voltage can be reduced greatly while keeping a high contact force and restoration force. The simulation results show that the novel design operates around 20 V and produces a contact force of >200 /spl mu/N per contact, and a restoration force of >115 /spl mu/N per contact. The measured actuation voltage is 20-30 V which is higher than the designed value, and is thought to be caused by stress induced deflection. The measured RF isolation is 29 dB (Cu=28 fF) and the measured insertion loss is 0.2 dB (Rs=2.1 /spl Omega/) at 2 GHz.

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一种低压高接触力RF-MEMS开关

本文介绍了一种新型的静电驱动RF-MEMS金属触点开关结构，可实现低压驱动。使用悬臂梁并在接触凹窝外放置下拉电极，可以大大降低驱动电压，同时保持较高的接触力和恢复力。仿真结果表明，该设计在20 V左右工作，每个触点产生>200 /spl mu/N的接触力，每个触点产生>115 /spl mu/N的恢复力。实测的驱动电压为20 ~ 30v，高于设计值，认为是由应力引起的偏转引起的。在2 GHz时，测量到的射频隔离为29 dB (Cu=28 fF)，插入损耗为0.2 dB (Rs=2.1 /spl ω /)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)

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