M. Eremenko, N. Shandyba, N. Chernenko, S. Balakirev, M. Solodovnik, O. Ageev
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Abstract
In this work, we investigated the influence of the focused ion beams modification modes of the Si substrate local areas on the subsequent growth of GaAs layers by the molecular beam epitaxy. It was found that the crystallization of Ga droplets upon annealing in an arsenic flow does not lead to a significant change in the surface morphology. It was also found the growth of GaAs on substrates with areas modified at an accelerating voltage of 30 kV and subjected to subsequent annealing at a temperature of 800°C results in the formation of nanowires.
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