A high performance silicon bipolar monolithic RF linear power amplifier for W-LAN IEEE 802.11g applications

A. Scuderi, D. Cristaudo, F. Carrara, G. Palmisano
{"title":"A high performance silicon bipolar monolithic RF linear power amplifier for W-LAN IEEE 802.11g applications","authors":"A. Scuderi, D. Cristaudo, F. Carrara, G. Palmisano","doi":"10.1109/RFIC.2004.1320532","DOIUrl":null,"url":null,"abstract":"A monolithic 2.5 GHz linear power amplifier for W-LAN IEEE 802.11g applications was integrated using a low cost 22 GHz f/sub T/ silicon bipolar process. The three-stage power amplifier exhibits a 26 dBm output 1 dB compression point, 30 dB power gain, and 52% maximum power-added efficiency, while using a low quiescent current, of 40 mA. Thanks to an optimized linearization technique, the power amplifier is able to comply with the stringent error vector magnitude requirement of the standard up to a 21.5 dBm output power level, with a 32% power-added efficiency. The power amplifier includes advanced bias functionalities and a fully integrated average channel power detector.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2004.1320532","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9

Abstract

A monolithic 2.5 GHz linear power amplifier for W-LAN IEEE 802.11g applications was integrated using a low cost 22 GHz f/sub T/ silicon bipolar process. The three-stage power amplifier exhibits a 26 dBm output 1 dB compression point, 30 dB power gain, and 52% maximum power-added efficiency, while using a low quiescent current, of 40 mA. Thanks to an optimized linearization technique, the power amplifier is able to comply with the stringent error vector magnitude requirement of the standard up to a 21.5 dBm output power level, with a 32% power-added efficiency. The power amplifier includes advanced bias functionalities and a fully integrated average channel power detector.
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一种高性能硅双极单片射频线性功率放大器,适用于W-LAN IEEE 802.11g应用
采用低成本的22 GHz f/sub /硅双极工艺集成了一款适用于W-LAN IEEE 802.11g应用的单片2.5 GHz线性功率放大器。该三级功率放大器具有26 dBm输出1 dB压缩点,30 dB功率增益和52%的最大功率附加效率,同时使用40 mA的低静态电流。得益于优化的线性化技术,该功率放大器能够满足标准严格的误差矢量幅度要求,最高输出功率为21.5 dBm,功率附加效率为32%。该功率放大器包括先进的偏置功能和完全集成的平均信道功率检测器。
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