{"title":"Monte Carlo particle modeling of electron velocity overshoot effect in MSM photodiodes","authors":"M. Ryzhii, M. Willander, I. Khmyrova, V. Ryzhii","doi":"10.1109/LDS.1998.714533","DOIUrl":null,"url":null,"abstract":"We present a numerical study of metal-semiconductor-metal (MSM) photodiodes based on a planar structure composed of interdigitated Schottky contacts on top of a thin GaAs absorbing layer with lateral light input. A self-consistent ensemble Monte Carlo (MC) particle method with the Fourier transform of the calculated transient photocurrent is used to obtain the frequency dependent responsivity. It is shown that the MSM photodiodes can exhibit marked responsivity in terahertz range of signal frequencies even for contact spacing about few tenth of micrometer. The results of the MC simulation are discussed invoking proposed analytical model.","PeriodicalId":326271,"journal":{"name":"Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LDS.1998.714533","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We present a numerical study of metal-semiconductor-metal (MSM) photodiodes based on a planar structure composed of interdigitated Schottky contacts on top of a thin GaAs absorbing layer with lateral light input. A self-consistent ensemble Monte Carlo (MC) particle method with the Fourier transform of the calculated transient photocurrent is used to obtain the frequency dependent responsivity. It is shown that the MSM photodiodes can exhibit marked responsivity in terahertz range of signal frequencies even for contact spacing about few tenth of micrometer. The results of the MC simulation are discussed invoking proposed analytical model.
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