{"title":"The study of thermal oxidation of SiC surface","authors":"M.T.H. Aung, J. Szmidt, M. Bakowski","doi":"10.1109/WBL.2001.946590","DOIUrl":null,"url":null,"abstract":"The authors report systematic investigation of SiO/sub 2/-SiC interface states for n-type 4H-SiC. MOS capacitors were fabricated on homoepilayers grown on n-type 4H-SiC with wet oxidation followed by wet re-oxidation and postmetallization anneals (PMA).","PeriodicalId":315832,"journal":{"name":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WBL.2001.946590","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
The authors report systematic investigation of SiO/sub 2/-SiC interface states for n-type 4H-SiC. MOS capacitors were fabricated on homoepilayers grown on n-type 4H-SiC with wet oxidation followed by wet re-oxidation and postmetallization anneals (PMA).
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