{"title":"Field emission property of SiC thick film deposited at low temperature by DC magnetron sputtering","authors":"Y. J. Wei, H. Qi, W. Wu","doi":"10.1109/IPEMC.2009.5157567","DOIUrl":null,"url":null,"abstract":"The amorphous SiC thick films were successfully fabricated on P-type ≪100≫ oriented silicon substrates at comparatively low temperature via DC magnetron sputtering deposition using a sintered SiC target with different DC power of 80W, 100W, 120W, and 150W. The deposition argon pressure was constantly at 2.0Pa. The as-grown SiC films were characterized by using X-ray diffraction, Atomic Force Microscope (AFM) and profilometer. The low turn-on field of about 3.5V/µm obtained from the field-emission property measurement at an anode-sample separation of 200µm shows that SiC films are competitive candidates for field-emission-based vacuum microelectronic devices.","PeriodicalId":375971,"journal":{"name":"2009 IEEE 6th International Power Electronics and Motion Control Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE 6th International Power Electronics and Motion Control Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPEMC.2009.5157567","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The amorphous SiC thick films were successfully fabricated on P-type ≪100≫ oriented silicon substrates at comparatively low temperature via DC magnetron sputtering deposition using a sintered SiC target with different DC power of 80W, 100W, 120W, and 150W. The deposition argon pressure was constantly at 2.0Pa. The as-grown SiC films were characterized by using X-ray diffraction, Atomic Force Microscope (AFM) and profilometer. The low turn-on field of about 3.5V/µm obtained from the field-emission property measurement at an anode-sample separation of 200µm shows that SiC films are competitive candidates for field-emission-based vacuum microelectronic devices.
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