Real-time monitoring of charge-pumping process for SiO2/Si interface defect analysis

Abstract

Time-domain charge pumping, which monitors transient currents during the charge pumping process, is a novel technique for analyzing interface defects of semiconductors. In this paper, we make a brief introduction about our recent works on the development of the time domain charge pumping, aiming at the detailed analysis of metal-oxide-semiconductor interface defects. We in particular show that the time-domain charge pumping enables us to obtain capture cross sections of electrons and holes independently, and to resolve electron-emission spectra into two components with different time constants. It is also shown that it allows us to investigate complicated current flow during the charge pumping process in silicon-on-insulator devices.