{"title":"W-band GaAs MESFET Frequency Doubler","authors":"J. Geddes, V. Sokolov, A. Contolatis","doi":"10.1109/MCS.1987.1114504","DOIUrl":null,"url":null,"abstract":"A monolithic W-band frequency doubler has been developed using submicron gate length GaAs MESFETs fabricated on ion implanted material. The frequency doubler provides a power output of over 4.0 mW at 94 GHz with an input drive of 70 mW at 47 GHz. To of a MESFET our knowledge this is the first report frequency doubler operating at W-band.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1987-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microwave and Millimeter-Wave Monolithic Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1987.1114504","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
A monolithic W-band frequency doubler has been developed using submicron gate length GaAs MESFETs fabricated on ion implanted material. The frequency doubler provides a power output of over 4.0 mW at 94 GHz with an input drive of 70 mW at 47 GHz. To of a MESFET our knowledge this is the first report frequency doubler operating at W-band.
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