Namgyung Hwang, Yooseong Lim, Se-Hyeong Lee, Jeong Seok Lee, M. Yi
{"title":"Solution based indium zinc oxide thin film transistor with diffused aluminum oxide insulator layer","authors":"Namgyung Hwang, Yooseong Lim, Se-Hyeong Lee, Jeong Seok Lee, M. Yi","doi":"10.23919/ELINFOCOM.2018.8330674","DOIUrl":null,"url":null,"abstract":"This paper introduces solution-processed Aluminum Oxide (AlOx) diffusion layer induced Indium Zinc Oxide (IZO) Thin Film Transistors(TFTs). We fixed IZO solution molar ratio, In : Zn = 3 : 2 and vary mole concentration of AlOx solution. We control the oxygen vacancies of IZO film using the tendency of Aluminum, capturing the oxygen vacancies and making the strong bond with oxygen atoms. Consequently, solution-processed IZO TFTs with Aluminum oxide diffusion layer showed improved device characteristics such stability and performance.","PeriodicalId":413646,"journal":{"name":"2018 International Conference on Electronics, Information, and Communication (ICEIC)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Conference on Electronics, Information, and Communication (ICEIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/ELINFOCOM.2018.8330674","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper introduces solution-processed Aluminum Oxide (AlOx) diffusion layer induced Indium Zinc Oxide (IZO) Thin Film Transistors(TFTs). We fixed IZO solution molar ratio, In : Zn = 3 : 2 and vary mole concentration of AlOx solution. We control the oxygen vacancies of IZO film using the tendency of Aluminum, capturing the oxygen vacancies and making the strong bond with oxygen atoms. Consequently, solution-processed IZO TFTs with Aluminum oxide diffusion layer showed improved device characteristics such stability and performance.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
