Comparisons of power to failure for low-noise amplifiers under high-power microwave pulses

Abstract

This study demonstrates comparisons of power to failure for SiGe based low noise amplifiers under the injection of high-power microwave (HPM) pulses. A general equation was derived to calculate power to failure. The pulse thermal resistance and breakdown temperature are calculated and determined. It is found that although these two transistors have close structure, their power to failure depend on the number of slots, pulse thermal resistance, thermal capacitance and breakdown temperature. Calculated and measured results show close correlations.