{"title":"The 1/f noise versus sheet resistance in poly-Si is similar to poly-SiGe resistors and Au-layers","authors":"L. Vandamme, H. Casier","doi":"10.1109/ESSDER.2004.1356565","DOIUrl":null,"url":null,"abstract":"We investigated the dependence of 1/f noise on sheet resistance in poly crystalline resistors. The analysis is based on Hooge's empirical relation. The 1/f noise is given by S/sub R//R/sup 2/=C/sub us//WLf. Experimental results on poly-Si are compared with results on poly-SiGe, Ti-silicided poly-Si, metal Au-layers and RuO/sub 2/ based thick film resistors. This review shows that the results are similar and are well described by the relation: C/sub us/=KR/sub sh/ with K=/spl alpha/q/spl mu/ (lowest value 5/spl times/10/sup -13/ /spl mu/m/sup 2///spl Omega/). We explain the difference in 1/f noise between P and B doped samples and deviations from the linear dependence between C/sub us/ and sheet resistance R/sub sh/.","PeriodicalId":287103,"journal":{"name":"Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"28","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDER.2004.1356565","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 28
Abstract
We investigated the dependence of 1/f noise on sheet resistance in poly crystalline resistors. The analysis is based on Hooge's empirical relation. The 1/f noise is given by S/sub R//R/sup 2/=C/sub us//WLf. Experimental results on poly-Si are compared with results on poly-SiGe, Ti-silicided poly-Si, metal Au-layers and RuO/sub 2/ based thick film resistors. This review shows that the results are similar and are well described by the relation: C/sub us/=KR/sub sh/ with K=/spl alpha/q/spl mu/ (lowest value 5/spl times/10/sup -13/ /spl mu/m/sup 2///spl Omega/). We explain the difference in 1/f noise between P and B doped samples and deviations from the linear dependence between C/sub us/ and sheet resistance R/sub sh/.
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