{"title":"Scalable methods for the analysis and optimization of gate oxide breakdown","authors":"Jian-wei Fang, S. Sapatnekar","doi":"10.1109/ISQED.2010.5450507","DOIUrl":null,"url":null,"abstract":"In this paper we first develop an analytic closed-form model for the failure probability (FP) of a large digital circuit due to gate oxide breakdown. Our approach accounts for the fact that not every breakdown leads to circuit failure, and shows a 6–11× relaxation of the predicted lifetime with respect to the ultra-pessimistic area-scaling method. Next, we develop a posynomial-based optimization approach to perform gate sizing for oxide reliability in addition to timing and area.","PeriodicalId":369046,"journal":{"name":"2010 11th International Symposium on Quality Electronic Design (ISQED)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 11th International Symposium on Quality Electronic Design (ISQED)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISQED.2010.5450507","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 17
Abstract
In this paper we first develop an analytic closed-form model for the failure probability (FP) of a large digital circuit due to gate oxide breakdown. Our approach accounts for the fact that not every breakdown leads to circuit failure, and shows a 6–11× relaxation of the predicted lifetime with respect to the ultra-pessimistic area-scaling method. Next, we develop a posynomial-based optimization approach to perform gate sizing for oxide reliability in addition to timing and area.
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