The control of a memory cell with the multiple stable states

Abstract

The subject of this paper is control of a memory cell with the multiple stable states consisting of two resonant tunnel diodes (RTDs). One of the RTDs is an element and the other represents a load. The circuit can be described with a third-order system so that its state space is R3 and exhibits three stable states. Although we are dealing with a specific circuit and three stable states, the results presented can be generalized to the space Rn (for both n = 2 and n > 2) and multiple stable states, as well. The RTDs, however, are mentioned here only to demonstrate the all-new phenomena in R3 space.