L. Selmi, C. Fiegna, E. Sangiorgi, R. Bez, B. Riccò
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Abstract
A reliable numerical model to compute the energy distribution of hot electrons in one dimensional MOS structures is used to investigate the role of carrier energy on the degradation induced by optically generated substrate hot electrons. Comparison with preliminary experimental results suggests that the degradation is mainly due to carriers with energy below the Si-SiO/sub 2/ energy barrier.<>
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