An Efficient Temperature-Dependent S-Parameter Calibration Routine

Julian R. Martin, L. Dunleavy, A. S. Fernandez
{"title":"An Efficient Temperature-Dependent S-Parameter Calibration Routine","authors":"Julian R. Martin, L. Dunleavy, A. S. Fernandez","doi":"10.1109/ARFTG.1992.326984","DOIUrl":null,"url":null,"abstract":"To obtain accurate temperature-dependent S-parameters of on-wafer devices as well as packaged components, S-parameter calibrations should be established at each temperature. A BASIC program is described here that provides an efficient means of performing LRM and TRL calibrations at multiple temperatures. This program employs the \"SIMs\" calibration procedure available on the HP8510 ANA. An external computer is used to store raw calibration data, which is then fed back to the ANA to set up separate calibration sets for each desired temperature. To illustrate the procedure, temperature dependent S-parameter measurement data is presented for a 0.5um × 300um MESFET. Data will also be presented to show that proper calibration at each measurement temperature is needed to derive accurate temperature dependent device models.","PeriodicalId":130939,"journal":{"name":"40th ARFTG Conference Digest","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"40th ARFTG Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ARFTG.1992.326984","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

To obtain accurate temperature-dependent S-parameters of on-wafer devices as well as packaged components, S-parameter calibrations should be established at each temperature. A BASIC program is described here that provides an efficient means of performing LRM and TRL calibrations at multiple temperatures. This program employs the "SIMs" calibration procedure available on the HP8510 ANA. An external computer is used to store raw calibration data, which is then fed back to the ANA to set up separate calibration sets for each desired temperature. To illustrate the procedure, temperature dependent S-parameter measurement data is presented for a 0.5um × 300um MESFET. Data will also be presented to show that proper calibration at each measurement temperature is needed to derive accurate temperature dependent device models.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
一种有效的温度相关s参数校准程序
为了获得晶圆上器件以及封装元件的精确温度相关s参数,应在每个温度下建立s参数校准。这里描述了一个BASIC程序,它提供了在多个温度下执行LRM和TRL校准的有效方法。本程序采用HP8510 ANA上可用的“SIMs”校准程序。外部计算机用于存储原始校准数据,然后将其反馈给ANA,以便为每个所需温度设置单独的校准集。为了说明这一过程,给出了0.5um × 300um MESFET的温度相关s参数测量数据。数据还将显示,在每个测量温度下需要适当的校准,以获得准确的温度相关器件模型。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A Frequency Domain Analysis of Multi-Conductor Transmission Line Interconnect Topologies Measuring Package and Interconnect Model Parameters Using Distributed Impedance "Extracting the Required Reflection to Compensate the Sealed Connector of a Microstrip Fixture" Temperature Dependent Characterization of GaAs MESFETs Interconnection Transmission Line Parameter Characterization
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1