Pub Date : 1992-12-01DOI: 10.1109/ARFTG.1992.326985
H. Stinehelfer
The microstrip test fixture with sealed connectors was tested and converted to the time domain to reveal the reflections at each connector. The MAMA program was used to make the measurements using the new hp8510c analyzer and the PC-486 controller. This is an experimental micro strip line in an empty box housing. A capacitive demonstration file was then used to modify the connectors by "injecting" into the experiment a capacitive reflection. The results gave the same result as if an actual capacitance had been added to the test fixture connector.
{"title":"\"Extracting the Required Reflection to Compensate the Sealed Connector of a Microstrip Fixture\"","authors":"H. Stinehelfer","doi":"10.1109/ARFTG.1992.326985","DOIUrl":"https://doi.org/10.1109/ARFTG.1992.326985","url":null,"abstract":"The microstrip test fixture with sealed connectors was tested and converted to the time domain to reveal the reflections at each connector. The MAMA program was used to make the measurements using the new hp8510c analyzer and the PC-486 controller. This is an experimental micro strip line in an empty box housing. A capacitive demonstration file was then used to modify the connectors by \"injecting\" into the experiment a capacitive reflection. The results gave the same result as if an actual capacitance had been added to the test fixture connector.","PeriodicalId":130939,"journal":{"name":"40th ARFTG Conference Digest","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116241928","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-12-01DOI: 10.1109/ARFTG.1992.327010
A. S. Fernandez, L. Dunleavy, Julian R. Martin
A procedure is described that uses precise on-wafer measurements, to extract accurate temperature dependent MESFET models. New results, presented here, explore the temperature dependence of small signal equivalent circuit parameters (ECPs) for some typical MESFET devices, and show excellent agreement between modelled and measured S-parameters for FETs and monolithic mm-wave amplifiers over temperature. A comparison to a new theoretically derived temperature model is also given. The presented work includes new results, on the temperature dependence of ECP elements for a 0.25mm × 400mm MESFET, and a 0.5mm × 300mm MESFET. Models based on these results are shown to produce an accurate prediction of temperature effects on FET, and FET based MMIC amplifier, small signal performance. The method can be employed to develop temperature dependent CAD foundry models for MESFETs. The information from these models can be used in concert with numerical and theoretical analyses to develop much needed fundamental understanding of temperature dependent FET behavior at microwave and millimeter-wave frequencies, and the physical device parameters that influence this behavior. As a step in this direction, experimentally observed ECP variations are correlated here with predictions from a newly developed theoretical temperature model for MESFETs.
{"title":"Temperature Dependent Characterization of GaAs MESFETs","authors":"A. S. Fernandez, L. Dunleavy, Julian R. Martin","doi":"10.1109/ARFTG.1992.327010","DOIUrl":"https://doi.org/10.1109/ARFTG.1992.327010","url":null,"abstract":"A procedure is described that uses precise on-wafer measurements, to extract accurate temperature dependent MESFET models. New results, presented here, explore the temperature dependence of small signal equivalent circuit parameters (ECPs) for some typical MESFET devices, and show excellent agreement between modelled and measured S-parameters for FETs and monolithic mm-wave amplifiers over temperature. A comparison to a new theoretically derived temperature model is also given. The presented work includes new results, on the temperature dependence of ECP elements for a 0.25mm × 400mm MESFET, and a 0.5mm × 300mm MESFET. Models based on these results are shown to produce an accurate prediction of temperature effects on FET, and FET based MMIC amplifier, small signal performance. The method can be employed to develop temperature dependent CAD foundry models for MESFETs. The information from these models can be used in concert with numerical and theoretical analyses to develop much needed fundamental understanding of temperature dependent FET behavior at microwave and millimeter-wave frequencies, and the physical device parameters that influence this behavior. As a step in this direction, experimentally observed ECP variations are correlated here with predictions from a newly developed theoretical temperature model for MESFETs.","PeriodicalId":130939,"journal":{"name":"40th ARFTG Conference Digest","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116458029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-12-01DOI: 10.1109/ARFTG.1992.326997
V. Tripathi, N. Orhanovic
Computer aided design compatible numerical and circuit modeling techniques for the simulation of general dispersive dissipative interconnects terminated in general nonlinear loads are presented. Starting from the physical layout of multiconductor layered interconnects associated with various packages, the procedure for the evaluation of the frequency dependent equivalent distributed self and mutual line constant matrices R, L, G, C, characterizing the structures is presented. CAD techniques for the simulation of these nonlinear multiports based on the SPICE circuit model, Laplace transforms of frequency domain network functions as well as recently developed generalized method of characteristics are discussed. Several examples of layered multiconductor structures terminated in typical logic elements are included to demonstrate the delay, distortion and corss talk associated with singly and multiply excited multiports.
{"title":"Modeling Simulation and Design of Dissipative Dispersive Uniform and Nonuniform Multiconductor Interconnects","authors":"V. Tripathi, N. Orhanovic","doi":"10.1109/ARFTG.1992.326997","DOIUrl":"https://doi.org/10.1109/ARFTG.1992.326997","url":null,"abstract":"Computer aided design compatible numerical and circuit modeling techniques for the simulation of general dispersive dissipative interconnects terminated in general nonlinear loads are presented. Starting from the physical layout of multiconductor layered interconnects associated with various packages, the procedure for the evaluation of the frequency dependent equivalent distributed self and mutual line constant matrices R, L, G, C, characterizing the structures is presented. CAD techniques for the simulation of these nonlinear multiports based on the SPICE circuit model, Laplace transforms of frequency domain network functions as well as recently developed generalized method of characteristics are discussed. Several examples of layered multiconductor structures terminated in typical logic elements are included to demonstrate the delay, distortion and corss talk associated with singly and multiply excited multiports.","PeriodicalId":130939,"journal":{"name":"40th ARFTG Conference Digest","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134220659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-12-01DOI: 10.1109/ARFTG.1992.326984
Julian R. Martin, L. Dunleavy, A. S. Fernandez
To obtain accurate temperature-dependent S-parameters of on-wafer devices as well as packaged components, S-parameter calibrations should be established at each temperature. A BASIC program is described here that provides an efficient means of performing LRM and TRL calibrations at multiple temperatures. This program employs the "SIMs" calibration procedure available on the HP8510 ANA. An external computer is used to store raw calibration data, which is then fed back to the ANA to set up separate calibration sets for each desired temperature. To illustrate the procedure, temperature dependent S-parameter measurement data is presented for a 0.5um × 300um MESFET. Data will also be presented to show that proper calibration at each measurement temperature is needed to derive accurate temperature dependent device models.
{"title":"An Efficient Temperature-Dependent S-Parameter Calibration Routine","authors":"Julian R. Martin, L. Dunleavy, A. S. Fernandez","doi":"10.1109/ARFTG.1992.326984","DOIUrl":"https://doi.org/10.1109/ARFTG.1992.326984","url":null,"abstract":"To obtain accurate temperature-dependent S-parameters of on-wafer devices as well as packaged components, S-parameter calibrations should be established at each temperature. A BASIC program is described here that provides an efficient means of performing LRM and TRL calibrations at multiple temperatures. This program employs the \"SIMs\" calibration procedure available on the HP8510 ANA. An external computer is used to store raw calibration data, which is then fed back to the ANA to set up separate calibration sets for each desired temperature. To illustrate the procedure, temperature dependent S-parameter measurement data is presented for a 0.5um × 300um MESFET. Data will also be presented to show that proper calibration at each measurement temperature is needed to derive accurate temperature dependent device models.","PeriodicalId":130939,"journal":{"name":"40th ARFTG Conference Digest","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128797760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-12-01DOI: 10.1109/ARFTG.1992.326994
E. Godshalk
Investigation of microwave and millimeter wave propagation in dielectric slabs and along coplanar transmission lines on dielectric slabs, reveal effects that may be explained by surface wave phenomenon. These surface waves can be transmitted and received with wafer probes and influence the transmission characteristics of coplanar transmission lines. This paper presents measured data showing the presence of surface waves and how they interact with wafer probes and coplanar waveguide transmission lines. Methods for minimizing these interactions are explored and quantified. A discussion of surface wave effects on wafer calibrations is included.
{"title":"Surface Wave Phenomenon in Wafer Probing Environments","authors":"E. Godshalk","doi":"10.1109/ARFTG.1992.326994","DOIUrl":"https://doi.org/10.1109/ARFTG.1992.326994","url":null,"abstract":"Investigation of microwave and millimeter wave propagation in dielectric slabs and along coplanar transmission lines on dielectric slabs, reveal effects that may be explained by surface wave phenomenon. These surface waves can be transmitted and received with wafer probes and influence the transmission characteristics of coplanar transmission lines. This paper presents measured data showing the presence of surface waves and how they interact with wafer probes and coplanar waveguide transmission lines. Methods for minimizing these interactions are explored and quantified. A discussion of surface wave effects on wafer calibrations is included.","PeriodicalId":130939,"journal":{"name":"40th ARFTG Conference Digest","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133023327","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-12-01DOI: 10.1109/ARFTG.1992.326999
Steve Williamson, G. Lewis
The use of personal computers, DOS programs, and Windows software applications can greatly reduce cycle time and labor costs, lower product costs, increase operator efficiency, and improve product quality. ITT's Gallium Arsenide Technology Center is automating test operations by converting various manual tasks into computer-executed work-flow tasks. We were able to slash the amount of time required to complete data summary operations by a ratio of 18:1 and quality control operations by a ratio of 4:1. The key to these improvements was approaching operations from more global perspectives and applying recent software innovations that enable automation across multiple software environments. The software that allows these accomplishments, we discovered, is Hewlett Packard's NewWave.
{"title":"Automating Test Operations to Improve Quality and Productivity","authors":"Steve Williamson, G. Lewis","doi":"10.1109/ARFTG.1992.326999","DOIUrl":"https://doi.org/10.1109/ARFTG.1992.326999","url":null,"abstract":"The use of personal computers, DOS programs, and Windows software applications can greatly reduce cycle time and labor costs, lower product costs, increase operator efficiency, and improve product quality. ITT's Gallium Arsenide Technology Center is automating test operations by converting various manual tasks into computer-executed work-flow tasks. We were able to slash the amount of time required to complete data summary operations by a ratio of 18:1 and quality control operations by a ratio of 4:1. The key to these improvements was approaching operations from more global perspectives and applying recent software innovations that enable automation across multiple software environments. The software that allows these accomplishments, we discovered, is Hewlett Packard's NewWave.","PeriodicalId":130939,"journal":{"name":"40th ARFTG Conference Digest","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129723328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-12-01DOI: 10.1109/ARFTG.1992.327001
T. Rahal-Arabi, R. Suarez-Gartner, K.M. Lape
This paper presents a frequency domain technique for optimization, sensitivity, and robustness analysis of large high speed lossy multi-conductor transmission line networks in VLSI regimes. The technique is used to compare several interconnect topologies in terms of their electrical performance. Finally, to demonstrate the usefulness and accuracy of the technique, the numerical frequency domain results have been validated by independent time domain simulations.
{"title":"A Frequency Domain Analysis of Multi-Conductor Transmission Line Interconnect Topologies","authors":"T. Rahal-Arabi, R. Suarez-Gartner, K.M. Lape","doi":"10.1109/ARFTG.1992.327001","DOIUrl":"https://doi.org/10.1109/ARFTG.1992.327001","url":null,"abstract":"This paper presents a frequency domain technique for optimization, sensitivity, and robustness analysis of large high speed lossy multi-conductor transmission line networks in VLSI regimes. The technique is used to compare several interconnect topologies in terms of their electrical performance. Finally, to demonstrate the usefulness and accuracy of the technique, the numerical frequency domain results have been validated by independent time domain simulations.","PeriodicalId":130939,"journal":{"name":"40th ARFTG Conference Digest","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114894640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-12-01DOI: 10.1109/ARFTG.1992.326995
R. Gleason, Ken Smith
In order to take full advantage of MCM technology, it is desirable to push clock rates to the highest rate achievable. It is extremely important to accurately characterize parameters such as timing margins and undershoot conditions to pursue this goal. Probing internal nodes of MCMs is essential to optimizing their performance. This paper investigates the accuracy of signal acquisition under varying probe conditions. The effect of probe parasitic capacitance and inductance on timing measurements is measured and modeled.
{"title":"Accuracy Considerations in Internal Node Timing Measurements of High-Performance MCMs","authors":"R. Gleason, Ken Smith","doi":"10.1109/ARFTG.1992.326995","DOIUrl":"https://doi.org/10.1109/ARFTG.1992.326995","url":null,"abstract":"In order to take full advantage of MCM technology, it is desirable to push clock rates to the highest rate achievable. It is extremely important to accurately characterize parameters such as timing margins and undershoot conditions to pursue this goal. Probing internal nodes of MCMs is essential to optimizing their performance. This paper investigates the accuracy of signal acquisition under varying probe conditions. The effect of probe parasitic capacitance and inductance on timing measurements is measured and modeled.","PeriodicalId":130939,"journal":{"name":"40th ARFTG Conference Digest","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134249391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-12-01DOI: 10.1109/ARFTG.1992.327004
R. Marks, Dylan F. Williams
This paper introduces a new method for the characterization of transmission lines fabricated on lossy or dispersive dielectrics. The method, which is more accurate than conventional techniques, is used to examine the resistance, inductance, capacitance, and conductance per unit length of coplanar waveguide transmission lines fabricated on lossy silicon substrates.
{"title":"Interconnection Transmission Line Parameter Characterization","authors":"R. Marks, Dylan F. Williams","doi":"10.1109/ARFTG.1992.327004","DOIUrl":"https://doi.org/10.1109/ARFTG.1992.327004","url":null,"abstract":"This paper introduces a new method for the characterization of transmission lines fabricated on lossy or dispersive dielectrics. The method, which is more accurate than conventional techniques, is used to examine the resistance, inductance, capacitance, and conductance per unit length of coplanar waveguide transmission lines fabricated on lossy silicon substrates.","PeriodicalId":130939,"journal":{"name":"40th ARFTG Conference Digest","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116674471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-12-01DOI: 10.1109/ARFTG.1992.326998
J. Fikart, M. Fairbum, E. Minkus, Francis Kwan
{"title":"Accurate Modelling of MHMIC Passive Elements Yields a Successful Design and Packaging of a 20 GHz to 5 GHZ MHMIC Low-Noise Downconverter","authors":"J. Fikart, M. Fairbum, E. Minkus, Francis Kwan","doi":"10.1109/ARFTG.1992.326998","DOIUrl":"https://doi.org/10.1109/ARFTG.1992.326998","url":null,"abstract":"","PeriodicalId":130939,"journal":{"name":"40th ARFTG Conference Digest","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131362212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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