R. Southwick, M. Elgin, G. Bersuker, R. Choi, W. B. Knowlton
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引用次数: 1
Abstract
Hafnium oxide integrity is investigated. Time-zero dielectric breakdown tests to determine breakdown strength is performed for electron gate injection over a variety of HfO2 thicknesses. Results indicate the breakdown strength is not purely related to the electric field or voltage drop across the high-k but suggests a combination of both. Reliability of the gate stack seems to improve as the HfO2 layer thickness decreases
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