{"title":"The voltage (current) controlled frequency modulation effect in DUBAT device","authors":"W.L. Guo, Z.Y. Hou, A.L. Zheng, Y. Zheng","doi":"10.1109/TENCON.1995.496422","DOIUrl":null,"url":null,"abstract":"In this paper, the principle and realization of the voltage (current) controlled frequency modulation effect on one of the three terminal voltage controlled negative resistance devices-Dual Base transistor (DUBAT)-have been described for the first time.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"69 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TENCON.1995.496422","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, the principle and realization of the voltage (current) controlled frequency modulation effect on one of the three terminal voltage controlled negative resistance devices-Dual Base transistor (DUBAT)-have been described for the first time.
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