Architecture and circuit techniques for a reconfigurable memory block

K. Mai, R. Ho, E. Alon, L. Dean, Younggon Kim, P. Dinesh, M. Horowitz
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引用次数: 18

Abstract

A 2 kB reconfigurable SRAM block, using self-timed, pulse-mode circuits capable of emulating a portion of a cache or a streaming FIFO is realized in a 1.8 V 0.18 /spl mu/m CMOS process and operates at 1.1 GHz (10F04 cycle). The additional logic needed for reconfigurability consumes 26% of the total power and 32% of the total area.
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可重构存储器块的结构和电路技术
在1.8 V 0.18 /spl mu/m CMOS工艺中实现了一个2kb可重构SRAM块,使用自定时脉冲模式电路,能够模拟部分缓存或流FIFO,工作频率为1.1 GHz (10F04周期)。可重构性所需的额外逻辑消耗了总功率的26%和总面积的32%。
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