{"title":"Theoretical and Experimental Studies of Failure Mechanisms in Gallium Arsenide Three-Terminal Transferred Electron Devices","authors":"H. Grubin, W. Anderson, A. Christou","doi":"10.1109/IRPS.1984.362019","DOIUrl":null,"url":null,"abstract":"A two-dimensional transient numerical study of failure mechanisms in gallium arsenide transferred electron devices was undertaken. The simulation, which incorporates the effects of elevated temperature operation, mobility and donor density variations was designed to assess these contributions on device operation and reliability. The results of the study are consistent with a previously proposed reliability model and are discussed below.","PeriodicalId":326004,"journal":{"name":"22nd International Reliability Physics Symposium","volume":"49 2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1984-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"22nd International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1984.362019","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A two-dimensional transient numerical study of failure mechanisms in gallium arsenide transferred electron devices was undertaken. The simulation, which incorporates the effects of elevated temperature operation, mobility and donor density variations was designed to assess these contributions on device operation and reliability. The results of the study are consistent with a previously proposed reliability model and are discussed below.
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