P. Chiang, J. Ermer, W. Nishikawa, D. Krut, D. Joslin, J. Eldredge, B. Cavicchi, J. Olson
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引用次数: 24
Abstract
This paper describes the successful demonstration of high efficiency, large area monolithic triple-junction, n-on-p, GaInP/sub 2//GaAs/Ge cells. The highest cell efficiency (cell size: 2 cm/spl times/2 cm) measured to date is 25.7%, under 1 sun, AM0 illumination. A very uniform distribution of cell efficiency across a 3" diameter wafer is also achieved. The average efficiency of 164, 2 cm/spl times/2 cm triple junction cells and 52 cell-interconnect-cover (CIC) assemblies are 22.6% and 21.9%, respectively. The results of temperature coefficient, 1 MeV electron irradiation and thermal cycle measurements (for CICs) are also reported.
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