Low-Cost Modular 100-Watt Peak 10% Bandwidth Microstrip IMPATT Amplifier

J. F. Cushman, M. Hines
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Abstract

A New IMPATT diode amplifier circuit is described which uses planar microstrip circuitry. A single-diode stage serves as a driver for a four-diode combiner stage. The combiner uses a tree of three hybrids of the Wilkinson-Gysel type. GaAs double-drift IMPATT diodes are used. The device provides a minimum of 12 dB gain over a band from 9.4 to 10.6 GHz with a peak pulsed output between 105 and 120 watts over the band.
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低成本模块化100瓦峰值10%带宽微带输入放大器
介绍了一种采用平面微带电路的新型IMPATT二极管放大电路。单二极管级用作四二极管组合级的驱动器。该组合器使用由三个Wilkinson-Gysel型杂交品种组成的树。采用砷化镓双漂移IMPATT二极管。该器件在9.4至10.6 GHz频段内提供至少12 dB增益,在该频段内的峰值脉冲输出在105至120瓦之间。
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