{"title":"Low-Cost Modular 100-Watt Peak 10% Bandwidth Microstrip IMPATT Amplifier","authors":"J. F. Cushman, M. Hines","doi":"10.1109/MWSYM.1986.1132120","DOIUrl":null,"url":null,"abstract":"A New IMPATT diode amplifier circuit is described which uses planar microstrip circuitry. A single-diode stage serves as a driver for a four-diode combiner stage. The combiner uses a tree of three hybrids of the Wilkinson-Gysel type. GaAs double-drift IMPATT diodes are used. The device provides a minimum of 12 dB gain over a band from 9.4 to 10.6 GHz with a peak pulsed output between 105 and 120 watts over the band.","PeriodicalId":109161,"journal":{"name":"1986 IEEE MTT-S International Microwave Symposium Digest","volume":"58 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1986-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1986 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1986.1132120","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A New IMPATT diode amplifier circuit is described which uses planar microstrip circuitry. A single-diode stage serves as a driver for a four-diode combiner stage. The combiner uses a tree of three hybrids of the Wilkinson-Gysel type. GaAs double-drift IMPATT diodes are used. The device provides a minimum of 12 dB gain over a band from 9.4 to 10.6 GHz with a peak pulsed output between 105 and 120 watts over the band.