NBTI modeling in the framework of temperature variation

Abstract

Negative Bias Temperature Instability (NBTI) has become an important reliability concern for nano-scaled Complementary Metal Oxide Semiconductor (CMOS) devices. In this paper, we present an analysis of temperature impact on various sub-processes that contribute to NBTI degradation. We demonstrate our analysis on 90nm industrial design operating in temperature range 25–125°C. The key temperature impacts observed in our simulation are: (a) the threshold voltage increase in P-type Metal Oxide Semiconductor (PMOS) due to NBTI is very sensitive to temperature, and increases by 34% due to the temperature increment, (b) the hole mobility in PMOS inversion layer reduces by 11% with the temperature increment, and (c) the temperature has a marginal impact on the transistor delay, that increases by 3% with the temperature increment.