High-performance energy-efficient memory circuit technologies for sub-45nm technologies

A. Agarwal, R. Krishnamurthy
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Abstract

This tutorial discusses challenges and design solutions for high-performance energy efficient memory/register file circuit design. Technology scaling trends for leakage and process variation for sub-45nm technologies are analyzed, with special emphasis on their impact on wide fan in OR gates found in high performance register file. Novel high-speed and leakage/process tolerant circuits are reviewed. Leakage/process sensors which enable these processes compensating techniques are presented.
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用于45纳米以下技术的高性能节能存储电路技术
本教程讨论了高性能节能存储器/寄存器文件电路设计的挑战和设计解决方案。分析了45纳米以下技术的泄漏和工艺变化的技术缩放趋势,特别强调了它们对高性能寄存器文件中OR门宽扇的影响。综述了新型高速、耐漏/耐制程电路。泄漏/过程传感器,使这些过程补偿技术提出。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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