1.5um CMOS gate arrays with analog/digital macros designed using the common base arrays

S. Kawada, Y. Hara, T. Isono, T. Inuzuka
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Abstract

Mixed analog and digital circuits are realized on a single chip of 1.5um rule, single t5V power supplied, si.licon gate, and 320 through 19600 cells CMOS digital gate arrays without any extension of turn-around time and any restriction of designing. Voltage comparator with input offset voltage of lOmV MAX. and response time of 60nsec. D/A converters and A/D converters with 4 bit, 6 bit, 8 bit respectively, and an analog switch with 250hm on-resistance can exist simultaneously with digital circuits. Using this technology, about 1/10 of turnaround time on system developments compared with full-custom LSIs can be achieved. INTRODUCTION I t is desired eagerly in the semi-custom LSI field to integrate a system on a single chip by establishing a mixture of analog and digital technologies. Up to this time, there are a few ways to create mixed analog and digital circuits; i.e., full-custom LSIs, standard cells, masterslice LSIs which have more than 2 channel length transistors for analog circuit parts and digital circuit parts. or gate array of which all base transistor arrays are long channel length type [ I ] , t21. Each of them have several weak points, for example long turn-around time, high development Cost, restriction of the ratio between analog circuit parts and digital circuit parts, very Poor digital circuit's performance, and so on. STRUCTURES Analog function blocks are produced on base transistor arrays of commonly used 1.5um rule, single +5V power.supplied, and silicon gate CMOS digital gate array series. This gate array series contains 16 masters with 320 through 19600 cells. Figure 1 shows a microphotograph of a chip including analog function blocks. All of analog circuits can be placed anywhere on the base transistor arrays with only a few consideration (ex. cross talk. noise etc.) like digital circuits. These analog function blocks are registered as hardware macros in function block libraries. PRODUCTS DEVELOPMENT FLOW Gate arrays including analog circuits are developed according to the flow chart shown in Figure 2 . Just the same development flow and CAD tools of designing gate arrays with only digital circuits are used. In case of circuit simulation, analog function blocks are treated as black boxes. And only connections between analog function blocks and other blocks are checked. In this way, the turn-around time from the end o f the circuit simulation to the supply of engineering sample of mixed analog and digital circuits is reduced to about 1/10 compared with fullcustom LSIs. VOLTAGE COUPARAT ORS short channel length unit transistors such as: Wp/Lp = 33um/1.8um All analog circuits are constructed with WN/LN = 33um/1.6um, Figure 3 shows one of the comparator's layout pattern. Input transistors of differential Stage uses two unit transistors each, and they are placed cross coupled with each other. And power supply wires are also placed equally for the input pair transistors. The comparator's layout is made under such consideration, as a result, an input offset voltage is within g 0 m V MAX., and a response time is 60nsec TYP.. The distribution of comparator's input Offset voltage is shown in Figure 4 .
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采用通用基阵设计的带模拟/数字宏的1.5um CMOS门阵列
模拟和数字混合电路在1.5um规则,单t5V电源,si芯片上实现。和320到19600单元CMOS数字门阵列,不延长周转时间和设计上的任何限制。输入偏置电压为lOmV MAX的电压比较器。响应时间为60nsec。分别为4位、6位、8位的D/A转换器和A/D转换器,导通电阻250hm的模拟开关可以与数字电路同时存在。使用这种技术,与完全定制的lsi相比,系统开发的周转时间可以缩短1/10。在半定制LSI领域,迫切需要通过建立模拟和数字技术的混合来将系统集成到单个芯片上。到目前为止,有几种方法可以创建混合模拟和数字电路;即,全定制lsi,标准单元,具有超过2通道长度晶体管的主片lsi,用于模拟电路部件和数字电路部件。或所有基极晶体管阵列均为长通道长度型的门阵列[I], t21。它们都存在着周期长、开发成本高、模拟电路与数字电路比例受限、数字电路性能很差等缺点。模拟功能块是在常用的1.5um规则的基极晶体管阵列上生产的,单电源+5V。提供,和硅门CMOS数字门阵列系列。该门阵列系列包含16个主控单元,有320到19600个单元。图1显示了包含模拟功能块的芯片的显微照片。所有的模拟电路都可以放置在基本晶体管阵列的任何地方,只需要考虑一些问题(例如串扰)。噪声等)像数字电路。这些模拟函数块在函数块库中被注册为硬件宏。包括模拟电路在内的门阵列是根据图2所示的流程图开发的。仅使用数字电路设计门阵列的开发流程和CAD工具。在电路仿真中,模拟功能块被视为黑盒子。并且只检查模拟功能模块与其他模块之间的连接。这样,与全定制lsi相比,从电路仿真结束到提供混合模拟和数字电路的工程样本的周转时间减少到约1/10。电压耦合器或短通道长度单位晶体管,如:Wp/Lp = 33um/1.8um所有模拟电路均以WN/LN = 33um/1.6um构建,图3显示了比较器的布局图之一。差动级输入晶体管各采用两个单位晶体管,并交叉耦合放置。输入对晶体管的电源线也同样放置。比较器的布局是在这样的考虑下进行的,因此,输入偏置电压在g 0 m V MAX以内。,响应时间为60nsec TYP。比较器输入偏置电压的分布如图4所示。
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