Properties of evaporated ge thin-films for warm carrier devices

Abstract

Recently, there has been growing interest in thin-film antenna-coupled infrared laser detectors. In the thin-film infrared laser detectors, the warm carrier devices have been fabricated using the single crystal Ge wafer(1). But if these devices could be fabricated by using Ge thin-films deposited on insulating substrates, it would be attractive for flexibility of fabrication of the device structure. The responsivity of these devices, on the other hand, is proportional to the carrier mobility of semiconductor films(2). Therefore, semiconducting-films with large carrier mobility are necessary instead of the single crystal Ge wafer.